Datasheet > FPN560D75Z

FPN560D75Z

更新时间： 2024-01-14 15:00:58

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体管
页数	文件大小	规格书
8页	439K
描述
Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-226AE

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技术参数
数据手册

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FPN560D75Z 技术参数

生命周期：	Obsolete	包装说明：	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.29.00.75	风险等级：	5.84
最大集电极电流 (IC)：	3 A	集电极-发射极最大电压：	60 V
配置：	SINGLE	最小直流电流增益 (hFE)：	100
JEDEC-95代码：	TO-226AE	JESD-30 代码：	O-PBCY-T3
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	CYLINDRICAL
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	BOTTOM	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	75 MHz	Base Number Matches：	1

FPN560D75Z 数据手册

FPN560

FPN560A

TO-226

NPN Low Saturation Transistor

These devices are designed for high current gain and low

saturation voltage with collector currents up to 3.0 A continuous.

Sourced from Process NA.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

5.0

Collector Current - Continuous

Operating and Storage Junction Temperature Range

3.0

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

FPN560 / FPN560A

P_D

Total Device Dissipation

1.0

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

R_θJC

R_θJA

°C/W

125

1999 Fairchild Semiconductor Corporation

12 3 4 5 6 7 8

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