Datasheet > FPN430D75Z

FPN430D75Z

更新时间： 2024-01-09 10:23:43

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体管
页数	文件大小	规格书
8页	440K
描述
Small Signal Bipolar Transistor, 2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-226AE

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技术参数
数据手册

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FPN430D75Z 技术参数

生命周期：	Obsolete	包装说明：	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.29.00.75	风险等级：	5.84
最大集电极电流 (IC)：	2 A	集电极-发射极最大电压：	30 V
配置：	SINGLE	最小直流电流增益 (hFE)：	100
JEDEC-95代码：	TO-226AE	JESD-30 代码：	O-PBCY-T3
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	CYLINDRICAL
极性/信道类型：	PNP	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	BOTTOM	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	100 MHz

FPN430D75Z 数据手册

FPN430

FPN430A

TO-226

PNP Low Saturation Transistor

These devices are designed for high current gain and low

saturation voltage with collector currents up to 2.0 A continuous.

Sourced from Process PB.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

5.0

Collector Current

- Continuous

2.0

Operating and Storage Junction Temperature Range

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

FPN430 / FPN430A

P_D

Total Device Dissipation

1.0

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

R_θJC

R_θJA

°C/W

125

1999 Fairchild Semiconductor Corporation

12 3 4 5 6 7 8

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