Datasheet > FPN330AD75Z

FPN330AD75Z

更新时间： 2023-07-15 00:00:00

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	440K
描述
Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-226AE

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FPN330AD75Z 数据手册

NPN Low Saturation Transistor

(continued)

Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Max Units

OFF CHARACTERISTICS

BV_CEO

Collector-Emitter Breakdown

Voltage

Collector-Base Breakdown Voltage

I_C= 10 mA, I_B= 0

_C= 100 µA, I_E= 0

BV_CBO

BV_EBO

I_CBO

Emitter-Base Breakdown Voltage

Collector Cutoff Current

5.0

I_E= 100 µA, I_C= 0

V_CB= 30 V, I_E= 0

V_CB= 30 V, I_E= 0, T_A= 100°C

V_EB= 4.0 V, I_C= 0

100

µA

I_EBO

Emitter Cutoff Current

ON CHARACTERISTICS*

h_FE

DC Current Gain

100

250

120

I_C= 100 mA, V_CE= 2.0 V

_C= 1.0 A, V_CE= 2.0 V

330

330A

I_C= 2.0 A, V_CE= 2.0 V

Collector-Emitter Saturation Voltage

500

450

1.0

I_C= 1.0 A, I_B= 100 mA

330

330A

V_CE(sat)

_C= 2.0 A, I_B= 200 mA

Base-Emitter Saturation Voltage

I_C= 1.0 A, I_B= 100 mA

1.25

V_BE(sat)

V_BE(on)

I_C= 1.0 A, V_CE= 2.0 V

1.0

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

V_CB= 10 V, I_E= 0, f = 1.0 MHz

C_obo

F_T

Transition Frequency

I_C= 100 mA, V_CE= 5.0 V,

f = 100 MHz

100

MHz

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

123 4 5 6 7 8

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