5秒后页面跳转
FP15R06W1E3_B11 PDF预览

FP15R06W1E3_B11

更新时间: 2024-09-16 12:20:19
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体二极管晶体管功率控制双极性晶体管PC局域网
页数 文件大小 规格书
12页 677K
描述
EasyPIM module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC

FP15R06W1E3_B11 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:MODULE
包装说明:FLANGE MOUNT, R-XUFM-X23针数:23
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.04Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:422392
Samacsys Pin Count:29Samacsys Part Category:Integrated Circuit
Samacsys Package Category:OtherSamacsys Footprint Name:FP15R06W1E3_B11-2
Samacsys Released Date:2020-03-06 11:53:15Is Samacsys:N
其他特性:UL RECOGNIZED外壳连接:ISOLATED
最大集电极电流 (IC):22 A集电极-发射极最大电压:600 V
配置:COMPLEX门极-发射极最大电压:20 V
JESD-30 代码:R-XUFM-X23元件数量:7
端子数量:23最高工作温度:175 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):81 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):260 ns标称接通时间 (ton):29 ns
VCEsat-Max:2 VBase Number Matches:1

FP15R06W1E3_B11 数据手册

 浏览型号FP15R06W1E3_B11的Datasheet PDF文件第2页浏览型号FP15R06W1E3_B11的Datasheet PDF文件第3页浏览型号FP15R06W1E3_B11的Datasheet PDF文件第4页浏览型号FP15R06W1E3_B11的Datasheet PDF文件第5页浏览型号FP15R06W1E3_B11的Datasheet PDF文件第6页浏览型号FP15R06W1E3_B11的Datasheet PDF文件第7页 
Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FP15R06W1E3_B11  
EasyPIM™ Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTC  
EasyPIM™ module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC  
Vorläufige Daten / preliminary data  
V†Š» = 600V  
I† ÒÓÑ = 15A / I†ç¢ = 30A  
Typische Anwendungen  
Typical Applications  
Hilfsumrichter  
Klimaanlagen  
Motorantriebe  
Auxiliary Inverters  
Air Conditioning  
Motor Drives  
Elektrische Eigenschaften  
Electrical Features  
Niedrige Schaltverluste  
Niedriges V†ŠÙÈÚ  
Low Switching Losses  
Low V†ŠÙÈÚ  
Trench IGBT 3  
Trench IGBT 3  
V†ŠÙÈÚ mit positivem Temperaturkoeffizienten  
V†ŠÙÈÚ with positive Temperature Coefficient  
Mechanische Eigenschaften  
Mechanical Features  
AlèOé Substrat mit kleinem thermischen  
Widerstand  
AlèOé Substrate with Low Thermal Resistance  
Kompaktes Design  
Compact design  
PressFIT Verbindungstechnik  
PressFIT Contact Technology  
Robuste Montage durch integrierte  
Befestigungsklammern  
Rugged mounting due to integrated mounting  
clamps  
Module Label Code  
Barcode Code 128  
Content of the Code  
Digit  
Module Serial Number  
1 - 5  
Module Material Number  
Production Order Number  
Datecode (Production Year)  
Datecode (Production Week)  
6 - 11  
12 - 19  
20 - 21  
22 - 23  
DMX - Code  
prepared by: DK  
approved by: MB  
date of publication: 2010-07-29  
revision: 2.0  
material no: 34584  
UL approved (E83335)  
1

FP15R06W1E3_B11 替代型号

型号 品牌 替代类型 描述 数据表
FP15R06W1E3 INFINEON

完全替代

EasyPIM module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and NTC
FP15R06YE3_B4 INFINEON

类似代替

Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, MODULE-23

与FP15R06W1E3_B11相关器件

型号 品牌 获取价格 描述 数据表
FP15R06W1E3BOMA1 INFINEON

获取价格

Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, MODULE-23
FP15R06YE3 INFINEON

获取价格

Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, MODULE-23
FP15R06YE3_B4 INFINEON

获取价格

Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, MODULE-23
FP15R12KE3 INFINEON

获取价格

Insulated Gate Bipolar Transistor, 27A I(C), 1200V V(BR)CES, N-Channel, MODULE-23
FP15R12KE3BOMA1 INFINEON

获取价格

Insulated Gate Bipolar Transistor, 27A I(C), 1200V V(BR)CES, N-Channel, MODULE-23
FP15R12KE3G EUPEC

获取价格

IGBT-Module
FP15R12KE3G INFINEON

获取价格

Solder pin
FP15R12KE3G3V1 ETC

获取价格

IGBT Module
FP15R12KS4C INFINEON

获取价格

EconoPIM™ 2 1200 V三相PIM IGBT模块,采用支持高频开关的第二代快速
FP15R12KS4CBOSA1 INFINEON

获取价格

Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, MODULE-24