是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | MODULE |
包装说明: | FLANGE MOUNT, R-XUFM-X23 | 针数: | 23 |
Reach Compliance Code: | compliant | 风险等级: | 5.02 |
Is Samacsys: | N | 其他特性: | UL RECOGNIZED |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 16 A |
集电极-发射极最大电压: | 600 V | 配置: | COMPLEX |
门极-发射极最大电压: | 20 V | JESD-30 代码: | R-XUFM-X23 |
元件数量: | 7 | 端子数量: | 23 |
最高工作温度: | 175 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 68 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 260 ns |
标称接通时间 (ton): | 26 ns | VCEsat-Max: | 2 V |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
FP20R06W1E3_B11 | INFINEON |
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