Datasheet > FMY29N60S1FDA

FMY29N60S1FDA

更新时间： 2024-04-09 18:59:02

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
8页	355K
描述
TO-247

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数据手册

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FMY29N60S1FDA 数据手册

Automotive

FUJI POWER MOSFET

FMY29N60S1FDA

http://www.fujielectric.com/products/semiconductor/

Allowable Power Dissipation

P^D=f(Tc)

Safe Operating Area

ID=f(VDS): Duty=0 (Single pulse), Tc=25℃

300

250

200

150

100

10²

10¹

10⁰

10^-1

10^-2

10^-3

t=1us

10us

100us

1ms

Powerlosswaveform:

Squarewaveform

P_D

10^-1

10⁰

10¹

10²

10³

Tc [

100

125

150

℃

]

DS [V]

Typical Output Characteristics

I^D=f(VDS):80us pulse test, Tch=150

Typical Output Characteristics

=f(VDS):80us pulse test, Tch=25℃

℃

20V

10V

7.5V

6.5V

7.5V

VGS=6V

VGS=6.5V

VDS [V]

Typical Drain-Source on-state Resistance

I^D=f(VDS):80us pulse test, Tch=150

℃

I^D=f(VDS):80us pulse test, Tch=25

℃

1.2

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

6.5V

7.5V

10V

VGS=20V

10V

V^GS=20V

ID [A]

1 234 5 6 7 8

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