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FMY31N60ES
FUJI POWER MOSFET
Automotive
Super FAP-E3S Low Qg series
N-Channel enhancement mode power MOSFET
■Features
■Outline Drawings [mm]
■Equivalent circuit schematic
Low on-state resistance
Low switching loss
easy to use
Drain (D)
(more controllable switching dV/dt by Rg)
The reliability trial conforms to AEC Q101.
100% avalanche tested
Gate (G)
■Applications
Source (S)
Automotive switching applications
■Absolute Maximum Ratings at Tc=25℃(unless otherwise specified)
Description
Symbol
VDS
VDSX
ID
Characteristics
Unit
V
Remarks
VGS=-30V
600
600
Drain-Source Voltage
V
Continuous Drain Current
±31
±124
±30
31
A
Pulsed Drain Current
IDP
A
Gate-Source Voltage
VGS
IAS
V
Non-Repetitive Maximum Avalanche current
Non-Repetitive Maximum Avalanche Energy
Peak Diode Recovery dV/dt
Peak Diode Recovery di/dt
A
Note*1
Note*2
Note*3
Note*4
EAS
631
mJ
kV/μs
A/μs
W
dV/dt
-di/dt
PD
4.7
100
Maximum Power Dissipation
495
Tch
150
℃
Operating and Storage Temperature range
Tstg
-55 to +150
℃
Note*1 : Tch≦150℃,See Fig.1 and Fig.2
Note*2 : Starting Tch=25℃,L=1200μH,VCC=60V,RG=50Ω,See Fig.1 and Fig.2
EAS limited by maximum channel temperature and avalanche current.
See to Avalanche Energy graph of page 5
Note*3 : IF≦-ID,-di/dt=100A/μs,VCC≦BVDSS, Tch≦150℃
Note*4 : IF≦-ID,dV/dt=4.7kV/μs,VCC≦BVDSS, Tch≦150℃
■Electrical Characteristics at Tc=25℃(unless otherwise specified)
Static Ratings
Description
Symbol
BVDSS
Conditions
Min.
Typ.
Max.
Unit
V
ID=1mA
VGS=0V
600
600
3.7
-
-
-
Drain-Source Breakdown Voltage
ID=1mA
BVDSX
-
4.2
0.7
25
-
V
V
VGS=-30V
ID=250μA
Gate Threshold Voltage
VGS(th)
4.7
10
VDS= VGS
VDS= 600V
VGS=0V
Ta=25℃
Zero Gate Voltage Drain current
IDSS
μA
VDS= 480V
VGS=0V
Ta=125℃
-
250
100
200
VGS=30V
VDS= 0V
Gate-Source Leakage current
IGSS
-
10
nA
ID=15.5A
VGS=10V
Drain-Source On-State Resistance
RDS(on)
-
170
mΩ
1
Jun. 2013