Datasheet > FMY29N60S1FDA

FMY29N60S1FDA

更新时间： 2024-04-09 18:59:02

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
8页	355K
描述
TO-247

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FMY29N60S1FDA 数据手册

Automotive

FUJI POWER MOSFET

FMY29N60S1FDA

http://www.fujielectric.com/products/semiconductor/

Electrical Characteristics at T

=25°C (unless otherwise speciﬁed)

• Static Ratings

Description

Symbol

Conditions

Min.

Typ.

Max.

Unit

=1mA

GS=0V

Drain-Source Breakdown Voltage

BV^DSS

600

=1.1mA

DS= VGS

Gate Threshold Voltage

GS(th)

3.0

4.0

5.0

DS= 600V

GS=0V

=25°C

μA

mΩ

Zero Gate Voltage Drain Current

DSS

DS= 480V

GS=0V

=150°C

GS=±30V

DS= 0V

Gate-Source Leakage Current

Drain-Source On-State Resistance

Gate- Resistance

GSS

111

3.2

100

132

=14.5A

GS=10V

DS(on)

f=1MHz, Open drain

• Dynamic Ratings

Description

Symbol

Conditions

Min.

Typ.

Max.

Unit

=14.5A

DS=10V

Forward Transconductance

gfs

Input Capacitance

iss

1600

DS=400V

GS=0V

Output Capacitance

oss

rss

f=250kHz

Reverse Transfer Capacitance

d(on)

130

Turn-On Time

Turn-Off Time

DD=400V, VGS=10V

=14.5A, R

=27Ω

d(off)

170

See Fig.3 and Fig.4

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

DD=480V, I

GS=10V

=29A

See Fig.5

• Reverse Ratings

Description

Symbol

Conditions

Min.

Typ.

Max.

Unit

L=6.2mH, Tch=25°C

See Fig.1 and Fig.2

Avalanche Capability

IAV

=29A, VGS=0V

ch=25°C

Diode Forward On-Voltage

Reverse Recovery Time

Reverse Recovery Charge

1.35

=18A, VGS=0V

DD=400V

trr

200

1.5

μC

-di/dt=100A/μs

See Fig.6

Thermal Characteristics

Description

Symbol

Min.

Typ.

Max.

Unit

Channel to Case

th(ch-c)

th(ch-a)

0.577

°C/W

Channel to Ambient

123 4 5 6 7 8

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