Datasheet > FMY53N65S1A

FMY53N65S1A

更新时间： 2024-11-11 17:00:51

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
8页	2531K
描述
TO-247

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数据手册

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FMY53N65S1A 数据手册

http://www.fujielectric.com/products/semiconductor/

FMY53N65S1A

Super J MOS^®S1 series

Features

Automotive

FUJI POWER MOSFET

N-Channel enhancement mode power MOSFET

Outline Drawings [mm]

Equivalent circuit schematic

Low on-state resistance

Low switching loss

Easy to use

Drain (D)

(more controllable switching dV/dt by Rg)

The reliability trial conforms to AEC Q101.

100% avalanche tested

Applications

Gate (G)

Source (S)

Automotive switching applications

Absolute Maximum Ratings at T =25°C (unless otherwise speciﬁed)

Description

Symbol

Characteristics

Unit

Remarks

650

Drain-Source Voltage

DSX

VGS=-30V

Continuous Drain Current

Pulsed Drain Current

±53

Tc=25°C Note*1

±159

Gate-Source Voltage

±30

Non-Repetitive Maximum Avalanche current

Non-Repetitive Maximum Avalanche Energy

Peak Diode Recovery dV/dt

Note *2

Note *3

Note *4

Note *5

1480

kV/μs

A/μs

dV/dt

-di/dt

Peak Diode Recovery di/dt

Maximum Power Dissipation

480

TC=25°C

150

°C

Operating and Storage Temperature range

stg

-55 to +150

Note *1 : Limited by maximum channel temperature.

Note *2 : T^ch≤150°C, See Fig.1 and Fig.2

Note *3 : Starting T^ch=25°C, IAS=11A, L=18.9mH, VDD=60V, RG=50Ω, See Fig.1 and Fig.2

E^ASlimited by maximum channel temperature and avalanche current.

Note *4 : I^F≤-26.5A, -di/dt=50A/μs, VDD≤ 300V, Tch≤150°C.

Note *5 : I^F≤-26.5A, dV/dt=13kV/μs, VDD≤ 300V, Tch≤150°C.

MARCH 2016

12 3 4 5 6 7 8

中文翻译

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