www.fujielectric.com/products/semiconductor/
Automotive
FMY60N025S2A
Super J MOS® S2 series
Features
FUJI POWER MOSFET
N-Channel enhancement mode power MOSFET
Equivalent circuit schematic
Low on-state resistance
Low switching loss
②Drain
Easy to use
(more controllable switching dV/dt by Rg)
The reliability trial conforms to AEC Q101.
100% avalanche tested
①
Gate
Applications
Automotive switching applications
③Source
①
②
③
Absolute Maximum Ratings at T =25°C (unless otherwise specified)
C
Parameter
Symbol
Characteristics
Unit
Remarks
V
V
DS
600
600
V
V
Drain-Source Voltage
DSX
V
GS=-30V
=25°C
=100°C Note*1
±95.5
±60.4
±286.5
±30
A
T
T
C
Note*1
Continuous Drain Current
ID
A
C
Pulsed Drain Current
I
DP
A
Note *1
Gate-Source Voltage
V
GS
V
Non-Repetitive Maximum Avalanche Current
Non-Repetitive Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
I
AS
8.5
A
Note *2
Note *3
E
AS
6074
50
mJ
kV/μs
kV/μs
A/μs
dVDS/dt
dV/dt
-di/dt
VDS≤ 600V
15
Note *4
Note *5
Peak Diode Recovery -di/dt
100
2.5
T
a
=25°C
=25°C
Maximum Power Dissipation
P
D
W
575
T
C
T
T
ch
150
°C
°C
Operating and Storage Temperature range
stg
-55 to +150
Note *1 : Limited by maximum channel temperature.
Note *2 : Tch ≤ 150°C, See Fig.1 and Fig.2
Note *3 : Starting Tch=25°C, IAS=5.1A, L=428mH, VDD=60V, RG=50Ω, See Fig.1 and Fig.2
EAS limited by maximum channel temperature and avalanche current.
Note *4 : ISD ≤ -ID,-di/dt=100A/μs, VDS peak ≤ 600V, Tch ≤ 150°C.
Note *5 : ISD ≤ -ID, dV/dt=15kV/μs, VDS peak ≤ 600V, Tch ≤ 150°C.
8923
FEBRUARY 2022
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