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FMY60N025S2A PDF预览

FMY60N025S2A

更新时间: 2024-11-11 15:19:43
品牌 Logo 应用领域
富士电机 - FUJI /
页数 文件大小 规格书
8页 607K
描述
TO-247(Type:A)

FMY60N025S2A 数据手册

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www.fujielectric.com/products/semiconductor/  
Automotive  
FMY60N025S2A  
Super J MOS® S2 series  
Features  
FUJI POWER MOSFET  
N-Channel enhancement mode power MOSFET  
Equivalent circuit schematic  
Low on-state resistance  
Low switching loss  
Drain  
Easy to use  
(more controllable switching dV/dt by Rg)  
The reliability trial conforms to AEC Q101.  
100% avalanche tested  
Gate  
Applications  
Automotive switching applications  
Source  
Absolute Maximum Ratings at T =25°C (unless otherwise specified)  
C
Parameter  
Symbol  
Characteristics  
Unit  
Remarks  
V
V
DS  
600  
600  
V
V
Drain-Source Voltage  
DSX  
V
GS=-30V  
=25°C  
=100°C Note*1  
±95.5  
±60.4  
±286.5  
±30  
A
T
T
C
Note*1  
Continuous Drain Current  
ID  
A
C
Pulsed Drain Current  
I
DP  
A
Note *1  
Gate-Source Voltage  
V
GS  
V
Non-Repetitive Maximum Avalanche Current  
Non-Repetitive Maximum Avalanche Energy  
Maximum Drain-Source dV/dt  
Peak Diode Recovery dV/dt  
I
AS  
8.5  
A
Note *2  
Note *3  
E
AS  
6074  
50  
mJ  
kV/μs  
kV/μs  
A/μs  
dVDS/dt  
dV/dt  
-di/dt  
VDS≤ 600V  
15  
Note *4  
Note *5  
Peak Diode Recovery -di/dt  
100  
2.5  
T
a
=25°C  
=25°C  
Maximum Power Dissipation  
P
D
W
575  
T
C
T
T
ch  
150  
°C  
°C  
Operating and Storage Temperature range  
stg  
-55 to +150  
Note *1 : Limited by maximum channel temperature.  
Note *2 : Tch ≤ 150°C, See Fig.1 and Fig.2  
Note *3 : Starting Tch=25°C, IAS=5.1A, L=428mH, VDD=60V, RG=50Ω, See Fig.1 and Fig.2  
EAS limited by maximum channel temperature and avalanche current.  
Note *4 : ISD ≤ -ID,-di/dt=100A/μs, VDS peak ≤ 600V, Tch ≤ 150°C.  
Note *5 : ISD ≤ -ID, dV/dt=15kV/μs, VDS peak ≤ 600V, Tch ≤ 150°C.  
8923  
FEBRUARY 2022  
1

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