Datasheet > FMY60N081S2FDA

FMY60N081S2FDA

更新时间： 2024-11-21 17:01:47

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
8页	416K
描述
TO-247(Type:A)

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FMY60N081S2FDA 数据手册

www.fujielectric.com/products/semiconductor/

Automotive

FMY60N081S2FDA

FUJI POWER MOSFET

Super J MOS^®S2 series

N-Channel enhancement mode power MOSFET

Features

Equivalent circuit schematic

Low on-state resistance

Low switching loss

②Drain

Easy to use

(more controllable switching dV/dt by Rg)

The reliability trial conforms to AEC Q101.

100% avalanche tested

①

Gate

Built in fast recovery diode

Applications

Automotive switching applications

③Source

①

②

③

Absolute Maximum Ratings at T =25°C (unless otherwise speciﬁed)

Parameter

Symbol

Characteristics

Unit

Remarks

600

Drain-Source Voltage

DSX

GS=-30V

=25°C

=100°C Note*1

±37

Note*1

Continuous Drain Current

±23.5

±111

±30

Pulsed Drain Current

Note *1

Gate-Source Voltage

Non-Repetitive Maximum Avalanche Current

Non-Repetitive Maximum Avalanche Energy

Maximum Drain-Source dV/dt

Peak Diode Recovery dV/dt

7.4

Note *2

Note *3

539

kV/μs

A/μs

dV^DS/dt

dV/dt

-di/dt

VDS≤ 600V

Note *4

Note *5

Peak Diode Recovery -di/dt

100

2.5

=25°C

Maximum Power Dissipation

235

150

°C

Operating and Storage Temperature range

stg

-55 to +150

Note *1 : Limited by maximum channel temperature.

Note *2 : T^ch≤ 150°C, See Fig.1 and Fig.2

Note *3 : Starting T^ch=25°C, IAS=7.4A, L=17.6mH, VDD=60V, RG=50Ω, See Fig.1 and Fig.2

E^ASlimited by maximum channel temperature and avalanche current.

Note *4 : I^SD≤ -ID,-di/dt=100A/μs, VDS peak ≤ 600V, Tch ≤ 150°C.

Note *5 : I^SD≤ -ID, dV/dt=30kV/μs, VDS peak ≤ 600V, Tch ≤ 150°C.

8928

FEBRFUARY 2022

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