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FMW60N190S2HF PDF预览

FMW60N190S2HF

更新时间: 2024-03-03 10:09:51
品牌 Logo 应用领域
富士电机 - FUJI /
页数 文件大小 规格书
8页 416K
描述
TO-247-P2

FMW60N190S2HF 数据手册

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FUJI POWER MOSFET  
FMW60N190S2HF  
http://www.fujielectric.com/products/semiconductor/  
Typical Capacitance  
C=f(VDS) : VGS=0V, f=250kHz  
Typical Coss stored energy  
10000  
1000  
100  
10  
10  
9
8
7
6
5
4
3
2
1
0
Ciss  
Coss  
Crss  
1
0.1  
1
10  
100  
1000  
0
100  
200  
300  
400  
500  
600  
VDS[V]  
VDS[V]  
Typical Switching Characteristics vs. ID Tch=25℃  
t=f(ID):Vdd=400V, VGS=10V/0V, RG=18Ω  
Typical Gate Charge Characteristics  
VGS=f(QG) : ID=15.5A, Tch=25℃  
1000  
100  
10  
10  
9
8
7
6
5
4
3
2
1
0
VDD=480V  
400V  
td(off)  
tr  
120V  
tf  
td(on)  
1
0.1  
1
10  
100  
0
10  
20  
QG[nC]  
30  
40  
50  
ID[A]  
Maximum Avalanche Energy vs. starting Tch  
E(AV)=f(starting Tch):Vcc=60V,I(AV)<=2.3A  
Transient Thermal Impedance  
Zth(ch-c)=f(t):D=0  
101  
100  
1400  
1200  
1000  
800  
600  
400  
200  
0
IAS=0.7A  
10-1  
10-2  
10-3  
IAS=1.4A  
IAS=2.3A  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
t [sec]  
0
50  
100  
starting Tch[℃]  
150  
5

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TO-247-P2