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FMP60N099S2HF PDF预览

FMP60N099S2HF

更新时间: 2024-03-03 10:09:48
品牌 Logo 应用领域
富士电机 - FUJI /
页数 文件大小 规格书
8页 841K
描述
TO-220

FMP60N099S2HF 数据手册

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FUJI POWER MOSFET  
FMP60N099S2HF  
http://www.fujielectric.com/products/semiconductor/  
Electrical Characteristics at T =25°C (unless otherwise specified)  
C
• Static Ratings  
Parameter  
Symbol  
Conditions  
min.  
typ.  
max.  
Unit  
V
GS=0V  
=250μA  
Drain-Source Breakdown Voltage  
BVDSS  
600  
-
-
V
ID  
V
DS=VGS  
=1.54mA  
Gate Threshold Voltage  
V
GS(th)  
3.5  
4.0  
-
4.5  
25  
V
I
D
V
V
DS=600V  
GS=0V  
T
ch=25°C  
-
-
-
Zero Gate Voltage Drain Current  
Gate-Source Leakage Current  
IDSS  
μA  
nA  
V
V
DS=480V  
GS=0V  
Tch=125°C  
-
250  
100  
V
V
DS=0V  
GS= ± 30V  
IGSS  
10  
V
GS=10V  
=14.6A  
Drain-Source On-State Resistance  
Gate resistance  
R
DS(on)  
G
-
-
0.092  
7.8  
0.099  
-
Ω
Ω
ID  
R
f=1MHz, open drain  
• Dynamic Ratings  
Parameter  
Symbol  
Conditions  
min.  
typ.  
max.  
Unit  
V
DS=25V  
=14.6A  
Forward Transconductance  
gfs  
9.5  
19  
-
S
I
D
Input Capacitance  
C
C
C
iss  
-
-
-
1630  
54  
-
-
-
V
V
DS=400V  
GS=0V  
Output Capacitance  
oss  
rss  
f=250kHz  
Reverse Transfer Capacitance  
7.0  
Effective output capacitance,  
energy related (Note *7)  
V
V
DS=0…400V  
GS=0V  
Co(er)  
-
124  
-
pF  
V
V
DS=0…400V  
GS=0V  
=constant  
Effective output capacitance,  
time related (Note *8)  
Co(tr)  
-
489  
-
ID  
t
t
t
t
d(on)  
-
-
-
-
-
-
-
-
29  
87  
121  
24  
65  
28  
25  
19  
-
-
-
-
-
-
-
-
V
DD=400V, VGS=10V  
=14.6A,  
Turn-On Time  
Turn-Off Time  
r
ID  
ns  
R
G
=15Ω  
d(off)  
f
See Fig.3 and Fig.4  
Total Gate Charge  
Q
Q
Q
Q
G
V
DD=400V, VGS=10V  
=29.2A  
Gate-Source Charge  
GS  
GD  
SW  
ID  
nC  
Gate-Drain Charge  
See Fig.5  
Drain-Source crossover Charge  
Note *7 : Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 400V.  
Note *8 : Co(tr) is a fixed capacitance that gives the same charging times as Coss while VDS is rising from 0 to 400V.  
• Reverse Diode  
Parameter  
Symbol  
Conditions  
min.  
typ.  
max.  
Unit  
I
T
SD=29.2A, VGS=0V  
ch=25°C  
Diode Forward On-Voltage  
VSD  
-
0.95  
1.35  
V
Reverse Recovery Time  
t
rr  
-
-
-
360  
6.0  
32  
-
-
-
ns  
μC  
A
V
DD=400V, ISD=29.2A  
-di/dt=100A/μs  
Reverse Recovery Charge  
Peak Reverse Recovery Current  
Q
rr  
Tch=25°C  
See Fig.6 and Fig.7  
Irp  
Thermal Resistance  
Parameter  
Symbol  
min.  
typ.  
max.  
Unit  
Channel to Case  
R
th(ch-c)  
th(ch-a)  
-
-
-
-
0.60  
62  
°C/W  
°C/W  
Channel to Ambient  
R
2

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