FMP76-010T

更新时间： 2024-01-16 15:30:27

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描述
Trench P & N-Channel Power MOSFET Common Drain Topology

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数据手册

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FMP76-010T 数据手册

Advance Technical Information

Trench^TMP & N-Channel

Power MOSFET

Common Drain Topology

P CH.

N CH.

FMP76-010T

V_DSS

I_D25

- 100V

- 54A

100V

62A

R_DS(on)

t_rr(typ)

24mΩ

11mΩ

70ns

67ns

ISOPLUS i4-Pak^TM

Symbol

Test Conditions

Maximum Ratings

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

V_ISOLD

50/60H_Z, RMS, t = 1min, leads-to-tab

2500

Isolated Tab

T_L

T_SOLD

1.6mm (0.062 in.) from case for 10s

Plastic body for 10s

300

260

°C

F_C

Mounting force

20..120 / 4.5..27

N/lb.

Features

^zSilicon chip on Direct-Copper Bond

(DCB) substrate

- UL recognized package

- Isolated mounting surface

- 2500V electrical isolation

^zAvalanche rated

^zLow Q_G

^zLow Drain-to-Tab capacitance

^zLow package inductance

Symbol

C_P

Test Conditions

Characteristic Values

Min.

Typ.

Max.

Coupling capacitance between shorted

pins and mounting tab in the case

d_S,d_A

pin - pin

pin - backside metal

1.7

5.5

Weight

Advantages

P - CHANNEL

Low gate drive requirement

High power density

Low drain to ground capacitance

Fast switching

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

- 100

V_DGR

T_J= 25°C to 150°C, R_GS= 1MΩ

V_GSS

V_GSM

Continuous

Transient

± 20

± 30

Applications

^zDC and AC motor drives

^zClass AB audio amplifiers

^zMulti-phase DC to DC converters

^zIndustrial battery chargers

^zSwitching power supplies

I_D25

I_DM

T_C= 25°C

- 54

T_C= 25°C, pulse width limited by T_JM

- 230

I_A

T_C= 25°C

- 38

1.0

E_AS

P_D

T_C= 25°C

132

DS100037(09/08)

12 3 4

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