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FMPA2151 PDF预览

FMPA2151

更新时间: 2024-01-01 08:22:58
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 射频和微波射频放大器微波放大器功率放大器
页数 文件大小 规格书
4页 458K
描述
2.4-2.5 GHz and 4.9-5.9 GHz Dual Band Linear Power Amplifier Module

FMPA2151 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:4 X 4 MM, 1.4 MM HEIGHT, LEADLESS PACKAGE-16
Reach Compliance Code:unknown风险等级:5.71
Is Samacsys:N特性阻抗:50 Ω
构造:COMPONENT增益:31 dB
最大输入功率 (CW):最大工作频率:2500 MHz
最小工作频率:2400 MHz最高工作温度:85 °C
最低工作温度:-40 °C射频/微波设备类型:NARROW BAND MEDIUM POWER
端子面层:NOT SPECIFIEDBase Number Matches:1

FMPA2151 数据手册

 浏览型号FMPA2151的Datasheet PDF文件第2页浏览型号FMPA2151的Datasheet PDF文件第3页浏览型号FMPA2151的Datasheet PDF文件第4页 
PRELIMINARY  
August 2006  
FMPA2151  
2.4–2.5GHz and 4.9–5.9GHz Dual Band Linear Power  
Amplifier Module  
Features  
General Description  
Dual band operation in a single package design  
Integrated bias bypass  
The FMPA2151 is a dual frequency band power amplifier  
module designed for high performance WLAN  
applications in the 2.4 to 2.5GHz and the 4.90 to 5.9GHz  
frequency bands. The 16 pin 4 x 4 x 1.4 mm package with  
internal matching on both input and output to 50Ω  
minimizes next level PCB space and allows for simplified  
integration. Only two external bias bypass capacitors are  
required. The two on-chip detectors provide power  
sensing capability. The PA’s low power consumption and  
excellent linearity are achieved using our InGaP  
Heterojunction Bipolar Transistor (HBT) technology.  
>33dB modulated gain 2.4 to 2.5GHz band  
>33dB modulated gain 4.9 to 5.9GHz band  
3.0% EVM at 19dBm modulated power out (2.4GHz)  
3.5% EVM at 19dBm modulated power out (5.5GHz)  
3.3V positive supply operation  
Separate integrated power detectors with 20dB  
dynamic range  
16 pin 4 x 4 x 1.4mm leadless package  
Internally matched to 50and DC blocked RF  
input/output  
Complimentary pin out available with part number  
FMPA2153 for MIMO applications.  
Optimized for use in 802.11a/b/g applications  
Device (4 x 4 x 1.4mm)  
Z
XYTT  
2151  
Electrical Characteristics(1) 802.11g (2.4-2.5 GHz) OFDM Modulation  
(with 176 µs burst time, 100 µs idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth  
Parameter  
Min.  
2.4  
Typ.  
Max.  
2.5  
Units  
GHz  
V
Frequency  
Collector Supply Voltage  
Mirror Supply Voltage (PA ON 2.4)  
Mirror Supply Current (PA ON 2.4)  
Gain  
3.0  
3.3  
3.0  
0.1  
31  
3.6  
2.6  
3.6  
V
mA  
dB  
Average Packet Current @ +19dBm Pout  
140  
3.0  
600  
280  
+20  
mA  
%
(2)  
EVM @ +19dBm Pout  
Detector Output @ +19dBm Pout  
Detector Output @ +7dBm Pout  
mV  
mV  
dBm  
(3)  
POUT Spectral Mask Compliance  
Notes:  
1. V = 3.3V, PA ON 2.4 = 3.3V, T = 25°C, PA is constantly biased, 50system.  
CC  
A
2. Percentage includes system noise floor of EVM = 0.8%.  
3. Measured at PIN at which Spectral Mask Compliance is satisfied. Two-sample windowing length applied.  
©2006 Fairchild Semiconductor Corporation  
FMPA2151 Rev. D  
1
www.fairchildsemi.com  

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