FMP76-010T

更新时间： 2024-01-31 06:02:47

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	106K
描述
Trench P & N-Channel Power MOSFET Common Drain Topology

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中文翻译

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数据手册

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FMP76-010T 数据手册

FMP76-010T

ISOPLUS i4-Pak^TMOutline

Symbol

(T_J= 25°C unless otherwise specified)

Test Conditions²

Characteristic Values

Min.

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= - 250 μA

V_DS= V_GS, I_D= - 250μA

V_GS= ±20 V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

- 100

- 2.0

- 4.0

± 100 nA

I_DSS

-15 μA

T_J= 125°C

- 750 μA

R_DS(on)

g_fs

V_GS= -10V, I_D= - 38A, Note 1

V_DS= -10V, I_D= - 38A, Note 1

24 mΩ

C_iss

C_oss

C_rss

13.7

V_GS= 0V, V_DS= - 25V, f = 1MHz

890

275

t_d(on)

t_r

t_d(off)

t_f

Resistive Switching Times

V_GS= -10V, V_DS= 0.5

V_DSS, I_D= - 38A

R_G= 1Ω (External)

Q_g(on)

Q_gs

197

V_GS= -10V, V_DS= 0.5 V_DSS, I_D= - 38A

Ref: IXYS CO 0077 R0

Q_gd

R_thJC

R_thCS

0.95 °C/W

°C/W

0.15

Drain-Source Diode

Characteristic Values

(T_J= 25°C unless otherwise specified)

Symbol

I_S

Test Conditions²

V_GS= 0V

Min. Typ.

Max.

- 54

I_SM

Repetitive, pulse width limited by T_JM

I_F= - 38A, V_GS= 0V, Note 1

- 304

- 1.3

V_SD

t_rr

I_F= - 38A, di/dt = 100A/μs

215

- 6

Q_RM

I_RM

V_R= - 50V, V_GS= 0V

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered

by one or more of the following U.S. patents: 4,850,072 5,017,508

4,881,106 5,034,796

4,835,592 4,931,844

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123 B1

6,306,728 B1

6,404,065 B1 6,683,344

6,727,585

7,005,734 B2 7,157,338B2

7,063,975 B2

6,771,478 B2 7,071,537

6,534,343

6,583,505

6,710,405 B2 6,759,692

6,710,463

123 4

中文翻译

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