http://www.fujielectric.com/products/semiconductor/
FUJI POWER MOSFET
FMP60N280S2HF
Super J MOS® S2 series
N-Channel enhancement mode power MOSFET
Features
Outline Drawings [mm]
Equivalent circuit schematic
10+00.5
4.5±0.2
Pb-free lead terminal
TO-220
1.3±0.2
RoHS compliant
uses Halogen-free molding compound
②Drain
Applications
For switching
1.2 ±0.2
PRE-SOLDER
①
Gate
1
2
3
+0.2
-0.1
0.8
0.4 +0.2
0
①
②
③
2.54±0.2
2.54± 0.2
2.7±0.2
③Source
CONNECTION
1
2
3
GATE
DRAIN
SOURCE
1
2
3
JEDEC
:
TO-220AB
DIMENSIONS ARE IN MILLIMETERS.
Absolute Maximum Ratings at T =25°C (unless otherwise specified)
C
Parameter
Symbol
Characteristics
Unit
Remarks
V
V
DS
600
600
13
V
V
A
A
A
V
Drain-Source Voltage
DSX
VGS=-30V
T
C
=25°C Note*1,2
=100°C Note*1,2
Continuous Drain Current
ID
8.2
TC
Pulsed Drain Current
Gate-Source Voltage
I
DP
GS
41.6
±30
Note *2
V
Non-Repetitive
Maximum Avalanche Current
I
AS
1.5
A
Note *3
Note *4
Non-Repetitive
Maximum Avalanche Energy
E
AS
468
mJ
Maximum Drain-Source dV/dt
dVDS/dt
50
13
V/ns
A
VDS≤ 600V
T
C
=25°C Note*1,2
=100°C Note*1,2
Continuous
Diode Forward Current
I
I
SD
8.2
A
TC
Pulsed Diode Forward Current
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
SDP
41.6
15
A
Note *2
Note *5
Note *6
dV/dt
-di/dt
V/ns
A/μs
100
2.02
75
T
a
=25°C
=25°C
Maximum Power Dissipation
P
D
W
T
C
T
T
ch
150
°C
°C
Operating and Storage Temperature range
stg
-55 to +150
Note *1 : Maximum duty cycle D=0.64
Note *2 : Limited by maximum channel temperature.
Note *3 : Tch≤150°C, See Fig.1 and Fig.2
Note *4 : Starting Tch=25°C, IAS=0.9A, L=1.06H, VDD=60V, RG=50Ω, See Fig.1 and Fig.2
EAS limited by maximum channel temperature and avalanche current.
Note *5 : ISD≤10.4A, -di/dt≤100A/μs, VDS peak≤ 600V, Tch≤150°C.
Note *6 : ISD≤10.4A, dV/dt≤15V/ns, VDS peak≤ 600V, Tch≤150°C.
8820b
MARCH 2017
1