FMMT2222ARTC

更新时间： 2024-01-29 17:09:12

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美台 - DIODES		晶体开关小信号双极晶体管光电二极管局域网
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数据手册

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FMMT2222ARTC 数据手册

SOT23 NPN SILICON PLANAR

SWITCHING TRANSISTORS

ISSUE 3 FEBRUARY 1996

FMMT2222

FMMT2222A

FEATURES

Fast switching

PARTMARKING DETAILS

FMMT2222

1BZ

FMMT2222A 1P

FMMT2222AR 3P

FMMT2222R

COMPLEMENTARY TYPES

FMMT2222 FMMT2907

FMMT2222A FMMT2907A

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

FMMT2222

FMMT2222A

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation at T_amb=25°C

600

330

°C

P_tot

Operating and Storage Temperature Range T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

SYMBOL FMMT2222 FMMT2222A UNIT CONDITIONS.

MIN. MAX. MIN. MAX.

Collector-Base

Breakdown Voltage

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=10µA, I_E=0

I_C=10mA, I_B=0

I_E=10µA, I_C=0

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

µA

_CB=50V, I_E=0

_CB=60V, I_E=0

V_CB=50V, I_E=0, T_amb=150°C

V_CB=60V, I_E=0, T_amb=150°C

Emitter Cut-Off

Current

I_EBO

V_EB=3V, I_C=0

Collector-Emitter

Cut-Off Current

I_CEX

V_CE=60V, V_EB(off)=3V

Collector-Emitter

Saturation Voltage

V_CE(sat)

V_BE(sat)

h_FE

0.3

1.0

0.3

1.0

I_C=150mA, I_B=15mA*

I_C=500mA, I_B=50mA*

Base-Emitter

Saturation Voltage

0.6

2.0

2.6

0.6

1.2

2.0

I_C=150mA, I_B=15mA*

I_C=500mA, I_B=50mA*

Static Forward

Current Transfer

Ratio

100

I_C=0.1mA, V_CE=10V*

I_C=1mA, V_CE=10V

I_C=10mA, V_CE=10V*

I_C=10mA, V_CE=10V, T_amb=-55°C

I_C=150mA, V_CE=10V*

I_C=150mA, V_CE=1V*

I_C=500mA, V_CE=10V*

300

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

Spice parameter data is available upon request for this device

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