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FMMT2369-1J PDF预览

FMMT2369-1J

更新时间: 2024-01-25 02:04:13
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2页 38K
描述
SOT23 NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTORS

FMMT2369-1J 数据手册

 浏览型号FMMT2369-1J的Datasheet PDF文件第2页 
SOT23 NPN SILICON PLANAR  
FMMT2369  
FMMT2369A  
HIGH SPEED SWITCHING TRANSISTORS  
ISSUE 3 – AUGUST 1995  
APPLICATIONS  
These devices are suitable for use in high speed, low current  
switching applications  
E
C
PARTMARKING DETAILS  
FMMT2369  
- 1J  
- 9R  
B
FMMT2369R  
FMMTA2369A - P5  
FMMTA2369AR - 9A  
SOT23  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCES  
VCEO  
VEBO  
IC  
VALUE  
UNIT  
V
Collector-Base Voltage  
40  
40  
Collector-Emitter Voltage  
V
Collector-Emitter Voltage  
15  
V
Emitter-Base Voltage  
4.5  
V
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (at T  
200  
mA  
mW  
°C  
Ptot  
330  
Tj:Tstg  
-55 to +150  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL  
FMMT2369 FMMT2369A UNIT CONDITIONS.  
MIN. MAX. MIN. MAX.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO  
40  
40  
V
IC=10µA, IE=0  
Collector-Emitter  
Breakdown Voltage  
V(BR)CEO  
V(BR)CES  
V(BR)EBO  
15  
40  
4.5  
15  
40  
4.5  
V
V
V
IC=10mA, IB=0*  
IC=10µA, VBE=0  
IE=10µA, IC=0  
Emitter-Base  
Breakdown Voltage  
Collector Cut-Off  
Current  
ICBO  
400  
25  
nA  
V
VCB=20V, IE=0  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
VBE(sat)  
hFE  
0.25  
0.20  
0.85  
120  
IC=10mA, IB=1mA*  
IC=10mA, IB=1mA*  
Base-Emitter  
Saturation Voltage  
0.7  
0.85 0.7  
V
Static Forward  
Current Transfer  
Ratio  
40  
20  
120  
40  
20  
IC=10mA, VCE=1V*  
IC=10mA, VCE=1V, Tamb=-55°C*  
IC=100mA, VCE=1V*  
20  
IC=100mA, VCE=2V*  
Output Capacitance Cobo  
4
4
pF  
ns  
VCB=5V, IE=0, f=140KHz  
Turn-on Time  
Turn-off Time  
Storage Time  
ton  
toff  
ts  
12  
12  
VCC=3V, VBE(off=) 1.5V IC=10mA,  
IB1=3mA (See tON circuit)  
18  
13  
18  
13  
ns  
ns  
VCC=3V, IC=10mA, IB1=3mA  
IB2=1.5mA(See tOFF circuit)  
IC=IB1= IB2=10mA  
(See Storage test circuit)  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
Spice parameter data is available upon request for this device  

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