5秒后页面跳转
FMM22-06PF PDF预览

FMM22-06PF

更新时间: 2024-09-18 19:55:51
品牌 Logo 应用领域
IXYS 局域网开关脉冲晶体管
页数 文件大小 规格书
2页 90K
描述
Power Field-Effect Transistor, 12A I(D), 600V, 0.35ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS, I4PAK-5

FMM22-06PF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:PLASTIC, ISOPLUS, I4PAK-5
针数:5Reach Compliance Code:compliant
风险等级:5.76其他特性:AVALANCHE RATED, UL RECOGNIZED
雪崩能效等级(Eas):1000 mJ外壳连接:ISOLATED
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):12 A最大漏极电流 (ID):12 A
最大漏源导通电阻:0.35 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T5JESD-609代码:e1
元件数量:2端子数量:5
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):130 W
最大脉冲漏极电流 (IDM):66 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FMM22-06PF 数据手册

 浏览型号FMM22-06PF的Datasheet PDF文件第2页 
Advance Technical Information  
PolarHVTM HiPerFET  
N-Channel Power MOSFET  
Phase leg Topology  
VDSS = 600V  
ID25 = 12A  
RDS(on) 350mΩ  
trr(max) 200ns  
FMM22-06PF  
3
2  
5
4
1
ISOPLUS i4-PakTM  
2
Symbol  
Test Conditions  
Maximum Ratings  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
1
Isolated Tab  
VISOLD  
50/60HZ, RMS, t = 1min, leads-to-tab  
2500  
~V  
5
TL  
TSOLD  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10s  
300  
260  
°C  
°C  
FC  
Mounting force  
20..120 / 4.5..27  
N/lb.  
Features  
z Silicon chip on Direct-Copper Bond  
(DCB) substrate  
- UL recognized package  
- Isolated mounting surface  
- 2500V electrical isolation  
z Avalanche rated  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
600  
600  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
z Low QG  
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
z Low Drain-to-Tab capacitance  
z Low package inductance  
ID25  
IDM  
TC = 25°C  
12  
66  
A
A
Advantages  
TC = 25°C, pulse width limited by TJM  
z
IA  
TC = 25°C  
TC = 25°C  
22  
A
J
Low gate drive requirement  
High power density  
Fast intrinsic rectifier  
Low drain to ground capacitance  
z
EAS  
1.0  
z
dV/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
10  
V/ns  
W
z
z
Fast switching  
130  
Applications  
z DC and AC motor drives  
Symbol  
CP  
Test Conditions  
Characteristic Values  
z UPS, solar and wind power inverters  
z Synchronous rectifiers  
Min.  
Typ.  
Max.  
Coupling capacitance between shorted  
pins and mounting tab in the case  
40  
pF  
z Multi-phase DC to DC converters  
z Industrial battery chargers  
z Switching power supplies  
dS ,dA  
dS ,dA  
pin - pin  
pin - backside metal  
1.7  
5.5  
mm  
mm  
Weight  
9
g
DS100038(09/08)  
© 2008 IXYS CORPORATION, All rights reserved  

与FMM22-06PF相关器件

型号 品牌 获取价格 描述 数据表
FMM220A RECTRON

获取价格

Reverse Voltage Vr : 20 V;Forward Current Io : 2.0 A;Max Surge Current : 50 A;Forward Volt
FMM22DREF ETC

获取价格

CONN EDGE DUAL FMALE 44POS 0.156
FMM22DREI ETC

获取价格

CONN EDGE DUAL FMALE 44POS 0.156
FMM22DREN ETC

获取价格

CONN EDGE DUAL FMALE 44POS 0.156
FMM22DRES ETC

获取价格

CONN EDGE DUAL FMALE 44POS 0.156
FMM22DRFH ETC

获取价格

CONN EDGE DUAL FMALE 44POS 0.156
FMM22DRKF ETC

获取价格

CONN EDGE DUAL FMALE 44POS 0.156
FMM22DRKF-S13 ETC

获取价格

CONN EDGE DUAL FMALE 44POS 0.156
FMM22DRKH ETC

获取价格

CONN EDGE DUAL FMALE 44POS 0.156
FMM22DRKH-S13 ETC

获取价格

CONN EDGE DUAL FMALE 44POS 0.156