Datasheet > FMH22N60S1

FMH22N60S1

更新时间： 2025-09-18 17:01:51

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
8页	603K
描述
TO-3P(Q)

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数据手册

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FMH22N60S1 数据手册

http://www.fujielectric.com/products/semiconductor/

FUJI POWER MOSFET

FMH22N60S1

Super J MOS^®S1 series

Features

N-Channel enhancement mode power MOSFET

Outline Drawings [mm]

Equivalent circuit schematic

φ3.2±0.1

15.5max

13 ±0.2

10 ±0.2

Pb-free lead terminal

RoHS compliant

TO-3P

1.5± 0.2

4.5±0.2

4.5± 0.2

1.5±0.2

②Drain

Applications

For switching

+0.3

-0.1

+0.3

-0.1

1.6

+0.3

-0.1

2.2

PRE-SOLDER

①

Gate

+0.2

-0.1

0.5 ^+0.2

1.1

5.45±0.2

1.5

①

②

CONNECTION

③

③Source

GATE

DRAIN

SOURCE

JEDEC

TO-3P

DIMENSIONS ARE IN MILLIMETERS.

Absolute Maximum Ratings at T =25°C (unless otherwise speciﬁed)

Parameter

Symbol

Characteristics

Unit

Remarks

600

±22

±14

±66

±30

Drain-Source Voltage

DSX

VGS=-30V

Tc=25°C Note*1

Tc=100°C Note*1

Note *1

Continuous Drain Current

Pulsed Drain Current

Gate-Source Voltage

Repetitive and Non-Repetitive

Maximum Avalanche Current

6.6

Note *2

Note *3

Non-Repetitive

Maximum Avalanche Energy

548.9

Maximum Drain-Source dV/dt

Peak Diode Recovery dV/dt

Peak Diode Recovery -di/dt

dV^DS/dt

dV/dt

-di/dt

kV/ns

A/μs

VDS≤ 600V

Note *4

Note *5

100

2.5

=25°C

Maximum Power Dissipation

170

150

°C

Operating and Storage Temperature range

stg

-55 to +150

Note *1 : Limited by maximum channel temperature.

Note *2 : T^ch≤150°C, See Fig.1 and Fig.2

Note *3 : Starting T^ch=25°C, IAS=4A, L=62.9mH, VDD=60V, RG=50Ω, See Fig.1 and Fig.2

E^ASlimited by maximum channel temperature and avalanche current.

Note *4 : I^F≤-ID, -di/dt=100A/μs, VDS peak≤ 600V, Tch≤150°C.

Note *5 : I^F≤-ID, dV/dt=15kV/μs, VDS peak≤ 600V, Tch≤150°C.

8450

APRIL 2016

12 3 4 5 6 7 8

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