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FMH35N60S1 PDF预览

FMH35N60S1

更新时间: 2024-03-03 10:10:11
品牌 Logo 应用领域
富士电机 - FUJI /
页数 文件大小 规格书
8页 1523K
描述
TO-3P(Q)

FMH35N60S1 数据手册

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http://www.fujielectric.com/products/semiconductor/  
FUJI POWER MOSFET  
FMH35N60S1  
Super SJ MOS series  
Features  
N-Channel enhancement mode power MOSFET  
Outline Drawings [mm]  
Equivalent circuit schematic  
φ3.2±0.1  
15.5max  
13 ±0.2  
10 ±0.2  
Pb-free lead terminal  
RoHS compliant  
TO-3P  
1.5±0.2
4.5± 0.2  
Drain  
Applications  
For switching  
+0.3  
-0.1  
+0.3  
-0.1  
1.6  
1.6  
+0.3  
-0.1  
2.2  
PRE-SOLDER  
Gate  
+0.2  
-0.1  
0.5 +0.2  
0
1.1  
5.45±0.2  
5.45±0.2  
1.5  
CONNECTION  
Source  
1
2
3
GATE  
DRAIN  
SOURCE  
JEDEC  
:
TO-3P  
DIMENSIONS ARE IN MILLIMETERS.  
Absolute Maximum Ratings at T =25°C (unless otherwise specified)  
C
Parameter  
Symbol  
Characteristics  
Unit  
Remarks  
V
V
DS  
600  
600  
±35  
±22  
±105  
±30  
V
V
A
A
A
V
Drain-Source Voltage  
DSX  
VGS=-30V  
Tc=25°C Note*1  
Tc=100°C Note*1  
Note *1  
Continuous Drain Current  
ID  
Pulsed Drain Current  
Gate-Source Voltage  
I
DP  
GS  
V
Repetitive and Non-Repetitive  
Maximum Avalanche Current  
I
AR  
6.6  
A
Note *2  
Note *3  
Non-Repetitive  
Maximum Avalanche Energy  
E
AS  
1239.6  
mJ  
Maximum Drain-Source dV/dt  
Peak Diode Recovery dV/dt  
Peak Diode Recovery -di/dt  
dVDS/dt  
dV/dt  
-di/dt  
50  
15  
kV/ns  
kV/ns  
A/μs  
VDS≤ 600V  
Note *4  
Note *5  
100  
2.5  
T
a
=25°C  
=25°C  
Maximum Power Dissipation  
P
D
W
270  
T
C
T
T
ch  
150  
°C  
°C  
Operating and Storage Temperature range  
stg  
-55 to +150  
Note *1 : Limited by maximum channel temperature.  
Note *2 : Tch≤150°C, See Fig.1 and Fig.2  
Note *3 : Starting Tch=25°C, IAS=4A, L=142mH, VDD=60V, RG=50Ω, See Fig.1 and Fig.2  
EAS limited by maximum channel temperature and avalanche current.  
Note *4 : IF≤-ID, -di/dt=100A/μs, VDS peak≤ 600V, Tch≤150°C.  
Note *5 : IF≤-ID, dV/dt=15kV/μs, VDS peak≤ 600V, Tch≤150°C.  
8463  
APRIL 2016  
1

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