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FMH30N60S1 PDF预览

FMH30N60S1

更新时间: 2024-11-03 17:01:31
品牌 Logo 应用领域
富士电机 - FUJI /
页数 文件大小 规格书
8页 645K
描述
TO-3P(Q)

FMH30N60S1 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:2.28峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

FMH30N60S1 数据手册

 浏览型号FMH30N60S1的Datasheet PDF文件第2页浏览型号FMH30N60S1的Datasheet PDF文件第3页浏览型号FMH30N60S1的Datasheet PDF文件第4页浏览型号FMH30N60S1的Datasheet PDF文件第5页浏览型号FMH30N60S1的Datasheet PDF文件第6页浏览型号FMH30N60S1的Datasheet PDF文件第7页 
http://www.fujielectric.com/products/semiconductor/  
FUJI POWER MOSFET  
FMH30N60S1  
Super J MOS® S1 series  
Features  
N-Channel enhancement mode power MOSFET  
Outline Drawings [mm]  
Equivalent circuit schematic  
Pb-free lead terminal  
RoHS compliant  
φ3.2±0.1  
TO-3P  
15.5max  
13 ±0.2  
10 ±0.2  
1.5±0.2  
4.5±0.2  
Drain  
Applications  
For switching  
+0.3  
-0.1  
+0.3  
-0.1  
1.6  
1.6  
+0.3  
-0.1  
Gate  
2.2  
PRE-SOLDER  
0.5 +0.2  
0
+0.2  
-0.1  
1.1  
1.5  
5.45±0.2  
5.45±0.2  
Source  
CONNECTION  
1
2
3
GATE  
DRAIN  
SOURCE  
JEDEC : TO-3P  
DIMENSIONS ARE IN MILLIMETERS.  
Absolute Maximum Ratings at T =25°C (unless otherwise specified)  
C
Description  
Symbol  
Characteristics  
Unit  
Remarks  
V
V
DS  
600  
600  
V
V
Drain-Source Voltage  
DSX  
VGS=-30V  
±30  
A
Tc=25°C Note*1  
Tc=100°C Note*1  
Continuous Drain Current  
ID  
±19  
A
Pulsed Drain Current  
I
DP  
±90  
A
Gate-Source Voltage  
V
GS  
±30  
V
Repetitive and Non-Repetitive Maximum Avalanche Current  
Non-Repetitive Maximum Avalanche Energy  
Maximum Drain-Source dV/dt  
I
AR  
6.6  
A
Note *2  
Note *3  
E
AS  
849.2  
50  
mJ  
kV/μs  
kV/μs  
A/μs  
dVDS/dt  
dV/dt  
-di/dt  
VDS≤ 600V  
Peak Diode Recovery dV/dt  
12  
Note *4  
Note *5  
Peak Diode Recovery -di/dt  
100  
2.5  
T
a
=25°C  
Maximum Power Dissipation  
P
D
W
220  
Tc=25°C  
T
ch  
150  
°C  
°C  
Operating and Storage Temperature range  
T
stg  
-55 to +150  
Note *1 : Limited by maximum channel temperature.  
Note *2 : Tch≤150°C, See Fig.1 and Fig.2  
Note *3 : Starting Tch=25°C, IAS=4A, L=97.3mH, VDD=60V, R  
AS limited by maximum channel temperature and avalanche current.  
≤-I , -di/dt=100A/μs, VDD≤400V, Tch≤150°C.  
≤-I , dV/dt=12kV/μs, VDD≤400V, Tch≤150°C.  
G
=50Ω, See Fig.1 and Fig.2  
E
Note *4 : I  
F
D
Note *5 : I  
F
D
Electrical Characteristics at T =25°C (unless otherwise specified)  
C
• Static Ratings  
Description  
Symbol  
Conditions  
min.  
typ.  
max.  
Unit  
I
V
D
=250μA  
GS=0V  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
BVDSS  
600  
-
3.0  
-
-
V
ID  
=250μA  
DS=VGS  
V
GS(th)  
2.5  
3.5  
25  
V
V
V
V
DS=600V  
GS=0V  
T
ch=25°C  
-
-
-
Zero Gate Voltage Drain Current  
Gate-Source Leakage Current  
I
DSS  
μA  
nA  
V
V
DS=480V  
GS=0V  
Tch=125°C  
-
250  
100  
V
V
GS= ±30V  
DS=0V  
IGSS  
10  
I
V
D
=15A  
GS=10V  
Drain-Source On-State Resistance  
Gate resistance  
R
DS(on)  
G
-
-
0.106  
3.2  
0.125  
-
Ω
Ω
R
f=1MHz, open drain  
07949a  
OCTOBER 2015  
1

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