http://www.fujielectric.com/products/semiconductor/
FUJI POWER MOSFET
FMH60N280S2HF
Super J MOS® S2 series
N-Channel enhancement mode power MOSFET
Features
Outline Drawings [mm]
Equivalent circuit schematic
φ3.2±0.1
15.5max
13 ±0.2
10 ±0.2
1.5±0.2
Pb-free lead terminal
TO-3P
4.5±0.2
4.5±0.2
1.5±0.2
RoHS compliant
uses Halogen-free molding compound
②Drain
Applications
For switching
+0.3
-0.1
+0.3
-0.1
1.6
1.6
+0.3
2.2
PRE-SOLDER
-0.1
①
Gate
+0.2
-0.1
0.5 +0.2
1.1
0
5.45±0.2
5.45±0.2
1.5
①
②
③
CONNECTION
③Source
1
2
3
GATE
DRAIN
SOURCE
JEDEC
:
TO-3P
DIMENSIONS ARE IN MILLIMETERS.
Absolute Maximum Ratings at T =25°C (unless otherwise specified)
C
Parameter
Symbol
Characteristics
Unit
Remarks
V
V
DS
600
600
13
V
V
A
A
A
V
Drain-Source Voltage
DSX
VGS=-30V
T
T
C
=25°C Note*1,2
=100°C Note*1,2
Continuous Drain Current
ID
8.2
C
Pulsed Drain Current
Gate-Source Voltage
I
DP
GS
41.6
±30
Note *2
V
Non-Repetitive
Maximum Avalanche Current
I
AS
1.5
A
Note *3
Note *4
Non-Repetitive
Maximum Avalanche Energy
E
AS
468
mJ
Maximum Drain-Source dV/dt
dVDS/dt
50
13
V/ns
A
V
DS≤ 600V
T
T
C
=25°C Note*1,2
Continuous
Diode Forward Current
I
I
SD
8.2
A
C
=100°C Note*1,2
Pulsed Diode Forward Current
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
SDP
41.6
15
A
Note *2
Note *5
Note *6
dV/dt
-di/dt
V/ns
A/μs
100
2.50
65
T
a
=25°C
=25°C
Maximum Power Dissipation
P
D
W
T
C
T
T
ch
150
°C
°C
Operating and Storage Temperature range
stg
-55 to +150
Note *1 : Maximum duty cycle D=0.65
Note *2 : Limited by maximum channel temperature.
Note *3 : Tch≤150°C, See Fig.1 and Fig.2
Note *4 : Starting Tch=25°C, IAS=0.9A, L=1.06H, VDD=60V, RG=50Ω, See Fig.1 and Fig.2
EAS limited by maximum channel temperature and avalanche current.
Note *5 : ISD≤10.4A, -di/dt≤100A/μs, VDS peak≤600V, Tch≤150°C.
Note *6 : ISD≤10.4A, dV/dt≤15V/ns, VDS peak≤600V, Tch≤150°C.
9021
MARCH 2017
1