Datasheet > FMH40N60S1FD

FMH40N60S1FD

更新时间： 2024-03-03 10:10:19

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
8页	1546K
描述
TO-3P(Q)

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数据手册

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FMH40N60S1FD 数据手册

http://www.fujielectric.com/products/semiconductor/

FUJI POWER MOSFET

FMH40N60S1FD

Super J MOS^®S1 series

N-Channel enhancement mode power MOSFET

Features

Outline Drawings [mm]

Equivalent circuit schematic

φ3.2±0.1

15.5max

13 ±0.2

10 ±0.2

Pb-free lead terminal

RoHS compliant

TO-3P

1.5±0.2

4.5±0.2

1.5±0.2

②Drain

Applications

For switching

+0.3

-0.1

+0.3

-0.1

1.6

+0.3

-0.1

2.2

PRE-SOLDER

①

Gate

+0.2

-0.1

0.5 ^+0.2

1.1

5.45±0.2

1.5

①

②

③

CONNECTION

③Source

GATE

DRAIN

SOURCE

JEDEC

TO-3P

DIMENSIONS ARE IN MILLIMETERS.

Absolute Maximum Ratings at T =25°C (unless otherwise speciﬁed)

Parameter

Symbol

Characteristics

Unit

Remarks

600

±40

±25

±120

±30

Drain-Source Voltage

DSX

VGS=-30V

Tc=25°C Note*1

Tc=100°C Note*1

Note*1

Continuous Drain Current

Pulsed Drain Current

Gate-Source Voltage

Repetitive and Non-Repetitive

Maximum Avalanche Current

7.6

Note *2

Note *3

Non-Repetitive

Maximum Avalanche Energy

1390

Maximum Drain-Source dV/dt

Peak Diode Recovery dV/dt

Peak Diode Recovery -di/dt

dV^DS/dt

dV/dt

-di/dt

kV/μs

A/μs

VDS≤ 600V

Note *4

Note *5

100

2.5

=25°C

Maximum Power Dissipation

315

150

°C

Operating and Storage Temperature range

stg

-55 to +150

Note *1 : Limited by maximum channel temperature.

Note *2 : T^ch≤ 150°C, See Fig.1 and Fig.2

Note *3 : Starting T^ch=25°C, IAS=4.6A, L=120mH, VDD=60V, RG=50Ω, See Fig.1 and Fig.2

E^ASlimited by maximum channel temperature and avalanche current.

Note *4 : I^F≤ -ID, -di/dt=100A/μs, VDS peak ≤ 600V, Tch ≤ 150°C.

Note *5 : I^F≤ -ID, dV/dt=30kV/μs, VDS peak ≤ 600V, Tch ≤ 150°C.

Electrical Characteristics at T =25°C (unless otherwise speciﬁed)

• Static Ratings

Parameter

Symbol

Conditions

min.

typ.

max.

Unit

=250μA

GS=0V

Drain-Source Breakdown Voltage

Gate Threshold Voltage

BV^DSS

600

=1.5mA

DS=VGS

GS(th)

DS=600V

GS=0V

ch=25°C

Zero Gate Voltage Drain Current

Gate-Source Leakage Current

DSS

μA

DS=480V

GS=0V

Tch=125°C

300

GS= ± 30V

DS=0V

IGSS

100

=20A

GS=10V

Drain-Source On-State Resistance

Gate resistance

DS(on)

0.079

1.1

0.093

f=1MHz, open drain

8506

OCTOBER 2015

12 3 4 5 6 7 8

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