FM25VN05-GTR

更新时间： 2024-02-05 01:08:39

品牌	Logo	应用领域
铁电 - RAMTRON		存储
页数	文件大小	规格书
16页	334K
描述
512Kb Serial 3V F-RAM Memory

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技术参数
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FM25VN05-GTR 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	SOIC	包装说明：	SOP,
针数：	8	Reach Compliance Code：	unknown
HTS代码：	8542.32.00.71	风险等级：	5.82
JESD-30 代码：	R-PDSO-G8	JESD-609代码：	e3
长度：	4.9 mm	内存密度：	524288 bit
内存集成电路类型：	MEMORY CIRCUIT	内存宽度：	8
湿度敏感等级：	1	功能数量：	1
端子数量：	8	字数：	65536 words
字数代码：	64000	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	64KX8	封装主体材料：	PLASTIC/EPOXY
封装代码：	SOP	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
认证状态：	Not Qualified	座面最大高度：	1.75 mm
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	2 V
标称供电电压 (Vsup)：	3.3 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Matte Tin (Sn)	端子形式：	GULL WING
端子节距：	1.27 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	3.9 mm

FM25VN05-GTR 数据手册

Pre-Production

FM25V05

512Kb Serial 3V F-RAM Memory

Features

Device ID and Serial Number

512K bit Ferroelectric Nonvolatile RAM

•

Device ID reads out Manufacturer ID & Part ID

Unique Serial Number (FM25VN05)

•

Organized as 65,536 x 8 bits

High Endurance 100 Trillion (10¹⁴) Read/Writes

10 Year Data Retention

Low Voltage, Low Power

NoDelay™ Writes

•

Low Voltage Operation 2.0V – 3.6V

90 µA Standby Current (typ.)

5 µA Sleep Mode Current (typ.)

Advanced High-Reliability Ferroelectric Process

Very Fast Serial Peripheral Interface - SPI

•

Up to 40 MHz Frequency

Direct Hardware Replacement for Serial Flash

SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)

Industry Standard Configurations

•

Industrial Temperature -40°C to +85°C

8-pin “Green”/RoHS SOIC Package

Write Protection Scheme

•

Hardware Protection

Software Protection

technology. The FM25VN05 is offered with a unique

serial number that is read-only and can be used to

identify a board or system. Both devices incorporate

a read-only Device ID that allows the host to

determine the manufacturer, product density, and

product revision. The devices are guaranteed over an

industrial temperature range of -40°C to +85°C.

Description

The FM25V05 is a 512-kilobit nonvolatile memory

employing an advanced ferroelectric process. A

ferroelectric random access memory or F-RAM is

nonvolatile and performs reads and writes like a

RAM. It provides reliable data retention for 10 years

while eliminating the complexities, overhead, and

system level reliability problems caused by Serial

Flash and other nonvolatile memories.

Pin Configuration

Unlike Serial Flash, the FM25V05 performs write

operations at bus speed. No write delays are incurred.

Data is written to the memory array immediately

after it has been transferred to the device. The next

bus cycle may commence without the need for data

polling. The product offers very high write

endurance, orders of magnitude more endurance than

Serial Flash. Also, F-RAM exhibits lower power

consumption than Serial Flash.

VDD

HOLD

VSS

Pin Name

Function

Chip Select

These capabilities make the FM25V05 ideal for

nonvolatile memory applications requiring frequent

or rapid writes or low power operation. Examples

range from data collection, where the number of

write cycles may be critical, to demanding industrial

controls where the long write time of Serial Flash can

cause data loss.

Write Protect

Hold

/HOLD

Serial Clock

Serial Data Input

Serial Data Output

Supply Voltage

Ground

VDD

VSS

The FM25V05 provides substantial benefits to users

of Serial Flash as a hardware drop-in replacement.

The devices use the high-speed SPI bus, which

enhances the high-speed write capability of F-RAM

This is a product in the pre-production phase of development. Device

characterization is complete and Ramtron does not expect to change the

specifications. Ramtron will issue a Product Change Notice if any

specification changes are made.

Ramtron International Corporation

1850 Ramtron Drive, Colorado Springs, CO 80921

(800) 545-FRAM, (719) 481-7000

http://www.ramtron.com

Rev. 2.0

May 2010

Page 1 of 16

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