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FM25VN10-G PDF预览

FM25VN10-G

更新时间： 2024-02-04 14:27:05
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
17页 484K
描述
1Mb Serial 3V F-RAM Memory

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中文翻译

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FM25VN10-G 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：SOIC
包装说明：SOP, SOP8,.25针数：8
Reach Compliance Code：unknownHTS代码：8542.32.00.71
风险等级：5.67Is Samacsys：N
JESD-30 代码：R-PDSO-G8JESD-609代码：e3
长度：4.9 mm内存密度：1048576 bit
内存集成电路类型：MEMORY CIRCUIT内存宽度：8
湿度敏感等级：1功能数量：1
端子数量：8字数：131072 words
字数代码：128000工作模式：SYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：128KX8封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：SOP8,.25
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260电源：2.5/3.3 V
认证状态：Not Qualified座面最大高度：1.75 mm
最大待机电流：0.00015 A子类别：SRAMs
最大压摆率：0.003 mA最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：MATTE TIN
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：3.9 mmBase Number Matches：1

FM25VN10-G 数据手册

 浏览型号FM25VN10-G的Datasheet PDF文件第2页浏览型号FM25VN10-G的Datasheet PDF文件第3页浏览型号FM25VN10-G的Datasheet PDF文件第4页浏览型号FM25VN10-G的Datasheet PDF文件第5页浏览型号FM25VN10-G的Datasheet PDF文件第6页浏览型号FM25VN10-G的Datasheet PDF文件第7页 
FM25V10  
1Mb Serial 3V F-RAM Memory  
Features  
Device ID and Serial Number  
1M bit Ferroelectric Nonvolatile RAM  
Organized as 131,072 x 8 bits  
Device ID reads out Manufacturer ID & Part ID  
Unique Serial Number (FM25VN10)  
High Endurance 100 Trillion (1014) Read/Writes  
10 Year Data Retention  
Low Voltage, Low Power  
NoDelay™ Writes  
Low Voltage Operation 2.0V – 3.6V  
90 A Standby Current (typ.)  
5 A Sleep Mode Current (typ.)  
Advanced High-Reliability Ferroelectric Process  
Very Fast Serial Peripheral Interface - SPI  
Up to 40 MHz Frequency  
Industry Standard Configurations  
Industrial Temperature -40 C to +85 C  
8-pin “Green”/RoHS SOIC Package  
Direct Hardware Replacement for Serial Flash  
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)  
Write Protection Scheme  
Hardware Protection  
Software Protection  
technology. The FM25VN10 is offered with a unique  
serial number that is read-only and can be used to  
identify a board or system. Both devices incorporate  
a read-only Device ID that allows the host to  
determine the manufacturer, product density, and  
product revision. The devices are guaranteed over an  
industrial temperature range of -40°C to +85°C.  
Description  
The FM25V10 is a 1-megabit nonvolatile memory  
employing an advanced ferroelectric process. A  
ferroelectric random access memory or F-RAM is  
nonvolatile and performs reads and writes like a  
RAM. It provides reliable data retention for 10 years  
while eliminating the complexities, overhead, and  
system level reliability problems caused by Serial  
Flash and other nonvolatile memories.  
Pin Configuration  
Unlike Serial Flash, the FM25V10 performs write  
operations at bus speed. No write delays are incurred.  
Data is written to the memory array immediately  
after it has been transferred to the device. The next  
bus cycle may commence without the need for data  
polling. The product offers very high write  
endurance, orders of magnitude more endurance than  
Serial Flash. Also, F-RAM exhibits lower power  
consumption than Serial Flash.  
1
2
3
4
8
7
6
5
S
Q
VDD  
HOLD  
C
W
VSS  
D
Pin Name  
Function  
/S  
/W  
/HOLD  
C
D
Q
VDD  
VSS  
Chip Select  
Write Protect  
Hold  
Serial Clock  
Serial Data Input  
Serial Data Output  
Supply Voltage  
Ground  
These capabilities make the FM25V10 ideal for  
nonvolatile memory applications requiring frequent  
or rapid writes or low power operation. Examples  
range from data collection, where the number of  
write cycles may be critical, to demanding industrial  
controls where the long write time of Serial Flash can  
cause data loss.  
The FM25V10 provides substantial benefits to users  
of Serial Flash as a hardware drop-in replacement.  
The devices use the high-speed SPI bus, which  
enhances the high-speed write capability of F-RAM  
This product conforms to specifications per the terms of the Ramtron standard warranty. The product has completed Ramtron’s  
internal qualification testing and has reached production status.  
Cypress Semiconductor Corporation  
Document Number: 001-84499 Rev. **  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised February 25, 2013  
1234567...17

中文翻译

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FM25VN10-G 替代型号

型号 品牌 替代类型 描述 数据表
FM25VN10-GTR CYPRESS

完全替代

 1Mb Serial 3V F-RAM Memory

与FM25VN10-G相关器件

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FM25VN10-GTR INFINEON

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 		256Kb Wide Voltage SPI F-RAM
FM25W256_13 CYPRESS

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FM25W256-G CYPRESS

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