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FM25W256-GTR PDF预览

FM25W256-GTR

更新时间： 2024-01-09 05:39:09
品牌 Logo 应用领域
铁电 - RAMTRON 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
13页 293K
描述
256Kb Wide Voltage SPI F-RAM

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FM25W256-GTR 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：SOP, SOP8,.25Reach Compliance Code：unknown
风险等级：5.88Is Samacsys：N
JESD-30 代码：R-PDSO-G8JESD-609代码：e0
内存密度：262144 bit内存集成电路类型：NON-VOLATILE SRAM
内存宽度：8端子数量：8
字数：32768 words字数代码：32000
最高工作温度：85 °C最低工作温度：-40 °C
组织：32KX8封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：SOP8,.25
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
电源：3/5 V认证状态：Not Qualified
最大待机电流：0.00015 A子类别：SRAMs
最大压摆率：0.007 mA表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
Base Number Matches：1

FM25W256-GTR 数据手册

 浏览型号FM25W256-GTR的Datasheet PDF文件第2页浏览型号FM25W256-GTR的Datasheet PDF文件第3页浏览型号FM25W256-GTR的Datasheet PDF文件第4页浏览型号FM25W256-GTR的Datasheet PDF文件第5页浏览型号FM25W256-GTR的Datasheet PDF文件第6页浏览型号FM25W256-GTR的Datasheet PDF文件第7页 
Preliminary  
FM25W256  
256Kb Wide Voltage SPI F-RAM  
Features  
256K bit Ferroelectric Nonvolatile RAM  
Write Protection Scheme  
•
•
Hardware Protection  
Software Protection  
•
•
•
•
•
Organized as 32,768 x 8 bits  
High Endurance 100 Trillion (1014) Read/Writes  
38 Year Data Retention (  
NoDelay™ Writes  
Advanced High-Reliability Ferroelectric Process  
@ +75ºC)  
Low Power Operation  
•
•
Wide Voltage Operation 2.7V – 5.5V  
15 µA (typ.) Standby Current  
Very Fast Serial Peripheral Interface - SPI  
Industry Standard Configurations  
•
•
•
Up to 20 MHz Frequency  
•
•
Industrial Temperature -40°C to +85°C  
Direct Hardware Replacement for EEPROM  
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)  
8-pin “Green”/RoHS SOIC (-G)  
Description  
Pin Configuration  
The FM25W256 is a 256-kilobit nonvolatile memory  
employing an advanced ferroelectric process. A  
ferroelectric random access memory or F-RAM is  
nonvolatile and performs reads and writes like a  
RAM. It provides reliable data retention for 10 years  
while eliminating the complexities, overhead, and  
system level reliability problems caused by  
EEPROM and other nonvolatile memories.  
1
8
7
6
5
CS  
SO  
WP  
VDD  
HOLD  
SCK  
SI  
2
3
4
VSS  
The FM25W256 performs write operations at bus  
speed. No write delays are incurred. Data is written to  
the memory array immediately after it has been  
successfully transferred to the device. The next bus  
cycle may commence immediately without the need  
for data polling. In addition, the product offers  
substantial write endurance compared with other  
nonvolatile memories. The FM25W256 is capable of  
supporting 1014 read/write cycles, or 100 million  
times more write cycles than EEPROM.  
Pin Name  
/CS  
Function  
Chip Select  
Write Protect  
Hold  
/WP  
/HOLD  
SCK  
SI  
SO  
VDD  
VSS  
Serial Clock  
Serial Data Input  
Serial Data Output  
Supply Voltage (2.7 to 5.5V)  
Ground  
These capabilities make the FM25W256 ideal for  
nonvolatile memory applications requiring frequent  
or rapid writes or low power operation. Examples  
range from data collection, where the number of  
write cycles may be critical, to demanding industrial  
controls where the long write time of EEPROM can  
cause data loss.  
Ordering Information  
FM25W256-G  
“Green”/RoHS 8-pin SOIC  
FM25W256-GTR “Green”/RoHS 8-pin SOIC,  
Tape & Reel  
The FM25W256 provides substantial benefits to  
users of serial EEPROM as a hardware drop-in  
replacement. The FM25W256 uses the high-speed  
SPI bus, which enhances the high-speed write  
capability  
of  
F-RAM  
technology.  
Device  
specifications are guaranteed over an industrial  
temperature range of -40°C to +85°C.  
This is a product that has fixed target specifications but are subject  
to change pending characterization results.  
Ramtron International Corporation  
1850 Ramtron Drive, Colorado Springs, CO 80921  
(800) 545-FRAM, (719) 481-7000  
http://www.ramtron.com  
Rev. 1.3  
Feb. 2011  
Page 1 of 13  
1234567...13

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