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FM25W64-GTR PDF预览

FM25W64-GTR

更新时间： 2024-02-15 11:21:40
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
13页 307K
描述
Non-Volatile SRAM, 8KX8, CMOS, PDSO8

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中文翻译

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FM25W64-GTR 技术参数

生命周期：Obsolete包装说明：,
Reach Compliance Code：unknownHTS代码：8542.32.00.71
风险等级：5.84内存集成电路类型：MEMORY CIRCUIT
Base Number Matches：1

FM25W64-GTR 数据手册

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Preliminary  
FM25W64  
64Kb Wide Voltage SPI F-RAM  
Features  
64K bit Ferroelectric Nonvolatile RAM  
Sophisticated Write Protection Scheme  
•
•
Hardware Protection  
Software Protection  
•
•
•
•
•
Organized as 8,192 x 8 bits  
High Endurance 100 Trillion (1014) Read/Writes  
38 Year Data Retention (  
NoDelay™ Writes  
Advanced high-reliability ferroelectric process  
@ +75ºC)  
Wide Operating Range  
•
•
Wide Voltage Operation 2.7V – 5.5V  
4 µA (typ.) Standby Current  
Very Fast Serial Peripheral Interface - SPI  
Industry Standard Configuration  
•
•
•
Up to 20 MHz maximum bus frequency  
Direct hardware replacement for EEPROM  
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)  
•
•
Industrial Temperature -40°C to +85°C  
8-pin “Green”/RoHS SOIC (-G)  
Description  
Pin Configuration  
The FM25W64 is a 64-kilobit nonvolatile memory  
employing an advanced ferroelectric process. A  
ferroelectric random access memory or F-RAM is  
nonvolatile but operates in other respects as a RAM.  
It provides reliable data retention for 38 years while  
eliminating the complexities, overhead, and system  
level reliability problems caused by EEPROM and  
other nonvolatile memories.  
1
8
7
6
5
CS  
SO  
WP  
VSS  
VDD  
HOLD  
SCK  
SI  
2
3
4
The FM25W64 performs write operations at bus  
speed. No write delays are incurred. Data is written to  
the memory array immediately after it has been  
successfully transferred to the device. The next bus  
cycle may commence immediately. In addition, the  
product offers substantial write endurance compared  
with other nonvolatile memories. The FM25W64 is  
capable of supporting up to 1014 read/write cycles --  
far more than most systems will require from a serial  
memory.  
Pin Names  
/CS  
Function  
Chip Select  
Hold  
/HOLD  
/WP  
Write Protect  
Serial Clock  
SCK  
SI  
Serial Data Input  
Serial Data Output  
SO  
VDD  
VSS  
Supply Voltage (2.7 to 5.5V)  
Ground  
These capabilities make the FM25W64 ideal for  
nonvolatile memory applications requiring frequent  
or rapid writes. Examples range from data collection,  
where the number of write cycles may be critical, to  
demanding industrial controls where the long write  
time of EEPROM can cause data loss.  
Ordering Information  
FM25W64-G  
“Green”/RoHS 8-pin SOIC  
“Green”/RoHS 8-pin SOIC,  
Tape & Reel  
FM25W64-GTR  
The FM25W64 provides substantial benefits to users  
of serial EEPROM, in  
a
hardware drop-in  
replacement. The FM25W64 uses the high-speed SPI  
bus, which enhances the high-speed write capability  
of F-RAM technology. The specifications are  
guaranteed over an industrial temperature range of  
-40°C to +85°C.  
This is a product that has fixed target specifications but are subject  
to change pending characterization results.  
Ramtron International Corporation  
1850 Ramtron Drive, Colorado Springs, CO 80921  
(800) 545-FRAM, (719) 481-7000  
www.ramtron.com  
Rev. 1.1  
Dec. 2010  
1 of 13  
1234567...13

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