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FM25W256-G PDF预览

FM25W256-G

更新时间: 2024-01-06 10:23:05
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 内存集成电路静态存储器光电二极管
页数 文件大小 规格书
14页 411K
描述
256Kb Wide Voltage SPI F-RAM

FM25W256-G 数据手册

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FM25W256  
256Kb Wide Voltage SPI F-RAM  
Features  
Write Protection Scheme  
Hardware Protection  
Software Protection  
256K bit Ferroelectric Nonvolatile RAM  
Organized as 32,768 x 8 bits  
High Endurance 100 Trillion (1014) Read/Writes  
38 Year Data Retention (@ +75ºC)  
NoDelay™ Writes  
Low Power Operation  
Wide Voltage Operation 2.7V 5.5V  
15 µA (typ.) Standby Current  
Advanced High-Reliability Ferroelectric Process  
Very Fast Serial Peripheral Interface - SPI  
Up to 20 MHz Frequency  
Industry Standard Configurations  
Industrial Temperature -40 C to +85 C  
8-pin “Green”/RoHS SOIC (-G)  
Direct Hardware Replacement for EEPROM  
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)  
Description  
Pin Configuration  
The FM25W256 is a 256-kilobit nonvolatile memory  
employing an advanced ferroelectric process. A  
ferroelectric random access memory or F-RAM is  
nonvolatile and performs reads and writes like a  
RAM. It provides reliable data retention for 38 years  
while eliminating the complexities, overhead, and  
system level reliability problems caused by  
EEPROM and other nonvolatile memories.  
1
2
3
4
8
7
6
5
CS  
SO  
VDD  
HOLD  
SCK  
SI  
WP  
VSS  
The FM25W256 performs write operations at bus  
speed. No write delays are incurred. Data is written to  
the memory array immediately after it has been  
successfully transferred to the device. The next bus  
cycle may commence immediately without the need  
for data polling. In addition, the product offers  
substantial write endurance compared with other  
nonvolatile memories. The FM25W256 is capable of  
supporting 1014 read/write cycles, or 100 million  
times more write cycles than EEPROM.  
Pin Name  
/CS  
/WP  
/HOLD  
SCK  
SI  
Function  
Chip Select  
Write Protect  
Hold  
Serial Clock  
Serial Data Input  
Serial Data Output  
SO  
VDD  
VSS  
Supply Voltage (2.7 to 5.5V)  
Ground  
These capabilities make the FM25W256 ideal for  
nonvolatile memory applications requiring frequent  
or rapid writes or low power operation. Examples  
range from data collection, where the number of  
write cycles may be critical, to demanding industrial  
controls where the long write time of EEPROM can  
cause data loss.  
Ordering Information  
FM25W256-G  
FM25W256-GTR “Green”/RoHS 8-pin SOIC,  
“Green”/RoHS 8-pin SOIC  
Tape & Reel  
The FM25W256 provides substantial benefits to  
users of serial EEPROM as a hardware drop-in  
replacement. The FM25W256 uses the high-speed  
SPI bus, which enhances the high-speed write  
capability  
of  
F-RAM  
technology.  
Device  
specifications are guaranteed over an industrial  
temperature range of -40°C to +85°C.  
This product conforms to specifications per the terms of the Ramtron standard warranty. The product has completed Ramtron’s  
internal qualification testing and has reached production status.  
Cypress Semiconductor Corporation  
Document Number: 001-84506 Rev. **  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised February 25, 2013  

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