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FM25VN02-GTR PDF预览

FM25VN02-GTR

更新时间: 2024-01-29 10:13:51
品牌 Logo 应用领域
铁电 - RAMTRON 存储
页数 文件大小 规格书
17页 338K
描述
256Kb Serial 3V F-RAM Memory

FM25VN02-GTR 数据手册

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Pre-Production  
FM25V02  
256Kb Serial 3V F-RAM Memory  
Features  
Device ID and Serial Number  
256K bit Ferroelectric Nonvolatile RAM  
Device ID reads out Manufacturer ID & Part ID  
Unique Serial Number (FM25VN02)  
Organized as 32,768 x 8 bits  
High Endurance 100 Trillion (1014) Read/Writes  
10 Year Data Retention  
Low Voltage, Low Power  
NoDelay™ Writes  
Low Voltage Operation 2.0V – 3.6V  
90 µA Standby Current (typ.)  
5 µA Sleep Mode Current (typ.)  
Advanced High-Reliability Ferroelectric Process  
Very Fast Serial Peripheral Interface - SPI  
Up to 40 MHz Frequency  
Direct Hardware Replacement for Serial Flash  
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)  
Industry Standard Configurations  
Industrial Temperature -40°C to +85°C  
8-pin “Green”/RoHS SOIC Package  
8-pin “Green”/RoHS TDFN Package  
Write Protection Scheme  
Hardware Protection  
Software Protection  
serial number that is read-only and can be used to  
identify a board or system. Both devices incorporate  
a read-only Device ID that allows the host to  
determine the manufacturer, product density, and  
product revision. The devices are guaranteed over an  
industrial temperature range of -40°C to +85°C.  
Description  
The FM25V02 is a 256-kilobit nonvolatile memory  
employing an advanced ferroelectric process. A  
ferroelectric random access memory or F-RAM is  
nonvolatile and performs reads and writes like a  
RAM. It provides reliable data retention for 10 years  
while eliminating the complexities, overhead, and  
system level reliability problems caused by Serial  
Flash and other nonvolatile memories.  
Pin Configuration  
1
2
3
4
8
7
6
5
S
Q
VDD  
HOLD  
C
Unlike Serial Flash, the FM25V02 performs write  
operations at bus speed. No write delays are incurred.  
Data is written to the memory array immediately  
after it has been transferred to the device. The next  
bus cycle may commence without the need for data  
polling. The product offers very high write  
endurance, orders of magnitude more endurance than  
Serial Flash. Also, F-RAM exhibits lower power  
consumption than Serial Flash.  
W
VSS  
D
1
2
3
4
8
7
6
5
VDD  
/HOLD  
C
D
/S  
Q
/W  
VSS  
These capabilities make the FM25V02 ideal for  
nonvolatile memory applications requiring frequent  
or rapid writes or low power operation. Examples  
range from data collection, where the number of  
write cycles may be critical, to demanding industrial  
controls where the long write time of Serial Flash can  
cause data loss.  
Top View  
Function  
Pin Name  
/S  
Chip Select  
Write Protect  
Hold  
/W  
/HOLD  
C
Serial Clock  
The FM25V02 provides substantial benefits to users  
of Serial Flash as a hardware drop-in replacement.  
The devices use the high-speed SPI bus, which  
enhances the high-speed write capability of F-RAM  
technology. The FM25VN02 is offered with a unique  
D
Q
Serial Data Input  
Serial Data Output  
Supply Voltage  
Ground  
VDD  
VSS  
This is a product in the pre-production phase of development. Device  
characterization is complete and Ramtron does not expect to change the  
specifications. Ramtron will issue a Product Change Notice if any  
specification changes are made.  
Ramtron International Corporation  
1850 Ramtron Drive, Colorado Springs, CO 80921  
(800) 545-FRAM, (719) 481-7000  
http://www.ramtron.com  
Rev. 2.0  
May 2010  
Page 1 of 17  

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