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FM25040A-S PDF预览

FM25040A-S

更新时间: 2024-02-11 03:31:11
品牌 Logo 应用领域
铁电 - RAMTRON 存储内存集成电路光电二极管
页数 文件大小 规格书
13页 141K
描述
4Kb FRAM Serial Memory

FM25040A-S 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:unknownHTS代码:8542.32.00.71
风险等级:5.72Is Samacsys:N
最长访问时间:200 ns其他特性:DATA RETENTION=10 YEARS; ENDURANCE=10 BILLION CYCLES
JESD-30 代码:R-PDSO-G8JESD-609代码:e0
长度:4.9 mm内存密度:4096 bit
内存集成电路类型:MEMORY CIRCUIT内存宽度:8
功能数量:1端子数量:8
字数:512 words字数代码:512
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:512X8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240电源:5 V
认证状态:Not Qualified座面最大高度:1.75 mm
最大待机电流:0.00001 A子类别:SRAMs
最大压摆率:0.0025 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3.9 mmBase Number Matches:1

FM25040A-S 数据手册

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FM25040A  
4Kb FRAM Serial Memory  
Features  
Sophisticated Write Protection Scheme  
4K bit Ferroelectric Nonvolatile RAM  
Hardware Protection  
Software Protection  
Organized as 512 x 8 bits  
High Endurance 1 Trillion (1012) Read/Writes  
45 year Data Retention  
Low Power Consumption  
10 µA Standby Current  
NoDelay™ Writes  
Advanced High-Reliability Ferroelectric Process  
Industry Standard Configuration  
Very Fast Serial Peripheral Interface - SPI  
Industrial Temperature -40° C to +85° C  
8-pin SOIC (-S)  
“Green” 8-pin SOIC (-G)  
Up to 20 MHz maximum Bus Frequency  
Direct hardware replacement for EEPROM  
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)  
Description  
Pin Configuration  
The FM25040A is a 4-kilobit nonvolatile memory  
employing an advanced ferroelectric process. A  
ferroelectric random access memory or FRAM is  
nonvolatile but operates in other respects as a RAM.  
It provides reliable data retention for 45 years while  
eliminating the complexities, overhead, and system  
level reliability problems caused by EEPROM and  
other nonvolatile memories.  
1
8
7
6
5
CS  
VDD  
HOLD  
SCK  
SI  
2
SO  
3
WP  
4
VSS  
Unlike serial EEPROMs, the FM25040A performs  
write operations at bus speed. No write delays are  
incurred. Data is written to the memory array in the  
cycle after it has been successfully transferred to the  
device. The next bus cycle may commence  
immediately without the need for data polling. In  
addition the product offers substantial write  
endurance compared with other nonvolatile  
memories. The FM25040A is capable of supporting  
up to 1012 read/write cycles -- far more than most  
systems will require from a serial memory.  
Pin Names  
/CS  
/WP  
/HOLD  
SCK  
SI  
SO  
VDD  
VSS  
Function  
Chip Select  
Write Protect  
Hold  
Serial Clock  
Serial Data Input  
Serial Data Output  
Supply Voltage 5V  
Ground  
These capabilities make the FM25040A ideal for  
nonvolatile memory applications requiring frequent  
or rapid writes. Examples range from data collection,  
where the number of write cycles may be critical, to  
demanding industrial controls where the long write  
time of EEPROM can cause data loss.  
Ordering Information  
FM25040A-S  
FM25040A-G  
8-pin SOIC  
“Green” 8-pin SOIC  
The FM25040A provides substantial benefits to users  
of serial EEPROM, in  
a
hardware drop-in  
replacement. The FM25040A uses the high-speed  
SPI bus which enhances the high-speed write  
capability  
of  
FRAM  
technology.  
Device  
specifications are guaranteed over an industrial  
temperature range of -40°C to +85°C.  
This product conforms to specifications per the terms of the Ramtron  
standard warranty. The product has completed Ramtron’s internal  
qualification testing and has reached production status.  
Ramtron International Corporation  
1850 Ramtron Drive, Colorado Springs, CO 80921  
(800) 545-FRAM, (719) 481-7000  
www.ramtron.com  
Rev. 3.0  
May 2006  
Page 1 of 13  

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