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FK14SM-9 PDF预览

FK14SM-9

更新时间: 2024-10-27 22:16:43
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体开关晶体管功率场效应晶体管脉冲局域网
页数 文件大小 规格书
5页 56K
描述
HIGH-SPEED SWITCHING USE

FK14SM-9 技术参数

生命周期:Transferred包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknown风险等级:5.37
Is Samacsys:N外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:450 V
最大漏极电流 (Abs) (ID):14 A最大漏极电流 (ID):14 A
最大漏源导通电阻:0.65 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):150 W
最大脉冲漏极电流 (IDM):42 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FK14SM-9 数据手册

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MITSUBISHI Nch POWER MOSFET  
FK14SM-9  
HIGH-SPEED SWITCHING USE  
FK14SM-9  
OUTLINE DRAWING  
Dimensions in mm  
4.5  
15.9MAX.  
1.5  
r
φ 3.2  
2
4.4  
1.0  
5.45  
q
w
e
5.45  
0.6  
2.8  
4
w r  
q GATE  
w DRAIN  
e SOURCE  
r DRAIN  
¡VDSS ................................................................................450V  
¡rDS (ON) (MAX) .............................................................. 0.65  
¡ID ......................................................................................... 14A  
¡Integrated Fast Recovery Diode (MAX.) ........150ns  
q
e
TO-3P  
APPLICATION  
Servo motor drive, Robot, UPS, Inverter Fluorecent  
lamp, etc.  
MAXIMUM RATINGS (Tc = 25°C)  
Symbol  
VDSS  
VGSS  
ID  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current  
Conditions  
Ratings  
Unit  
V
450  
VGS = 0V  
VDS = 0V  
±30  
V
14  
A
IDM  
IS  
42  
14  
A
Drain current (Pulsed)  
Source current  
A
ISM  
42  
A
Source current (Pulsed)  
Maximum power dissipation  
Channel temperature  
Storage temperature  
Weight  
PD  
150  
W
°C  
°C  
g
Tch  
–55 ~ +150  
–55 ~ +150  
4.8  
Tstg  
Typical value  
Feb.1999  

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