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FK14VS-9 PDF预览

FK14VS-9

更新时间: 2024-10-27 22:16:59
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体开关晶体管功率场效应晶体管脉冲
页数 文件大小 规格书
5页 54K
描述
HIGH-SPEED SWITCHING USE

FK14VS-9 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code:unknown风险等级:5.38
Is Samacsys:N外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:450 V
最大漏极电流 (Abs) (ID):14 A最大漏极电流 (ID):14 A
最大漏源导通电阻:0.65 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):150 W
最大脉冲漏极电流 (IDM):42 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FK14VS-9 数据手册

 浏览型号FK14VS-9的Datasheet PDF文件第2页浏览型号FK14VS-9的Datasheet PDF文件第3页浏览型号FK14VS-9的Datasheet PDF文件第4页浏览型号FK14VS-9的Datasheet PDF文件第5页 
MITSUBISHI Nch POWER MOSFET  
FK14VS-9  
HIGH-SPEED SWITCHING USE  
FK14VS-9  
OUTLINE DRAWING  
Dimensions in mm  
r
10.5MAX.  
4.5  
1.3  
+0.3  
–0  
0
1
5
0.5  
0.8  
q
w e  
w r  
q GATE  
w DRAIN  
e SOURCE  
r DRAIN  
q
¡VDSS ................................................................................450V  
¡rDS (ON) (MAX) .............................................................. 0.65  
¡ID ......................................................................................... 14A  
¡Integrated Fast Recovery Diode (MAX.) ........150ns  
e
TO-220S  
APPLICATION  
Servo motor drive, Robot, UPS, Inverter Fluorecent  
lamp, etc.  
MAXIMUM RATINGS (Tc = 25°C)  
Symbol  
VDSS  
VGSS  
ID  
Parameter  
Drain-source voltage  
Gate-source voltage  
Drain current  
Conditions  
Ratings  
Unit  
450  
V
V
VGS = 0V  
VDS = 0V  
±30  
14  
A
IDM  
IS  
42  
14  
A
Drain current (Pulsed)  
Source current  
A
ISM  
42  
A
Source current (Pulsed)  
Maximum power dissipation  
Channel temperature  
Storage temperature  
Weight  
PD  
150  
W
°C  
°C  
g
Tch  
–55 ~ +150  
–55 ~ +150  
1.2  
Tstg  
Typical value  
Feb.1999  

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