型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FGT303 | SANKEN |
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Insulated Gate Bipolar Transistor, 30A I(C), 300V V(BR)CES, N-Channel, TO-220AB, FM20, TO- | |
FGT313 | SANKEN |
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Insulated Gate Bipolar Transistor | |
FGT612 | SANKEN |
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Insulated Gate Bipolar Transistor | |
FGUM020P8001/S35L | IVO |
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Through Beam Photoelectric Sensor, 0.4mm Min, 200mA, Rectangular | |
FGUM030P6901/S35A | IVO |
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Through Beam Photoelectric Sensor, 0.3mm Min, 200mA, Rectangular | |
FGUM030P8001/S35L | IVO |
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Through Beam Photoelectric Sensor, 0.5mm Min, 200mA, Rectangular | |
FGUM050P6901/S35A | IVO |
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Through Beam Photoelectric Sensor, 0.3mm Min, 200mA, Rectangular | |
FGUM050P8001/S35L | IVO |
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Through Beam Photoelectric Sensor, 0.5mm Min, 200mA, Rectangular | |
FGUM080P6901/S35A | IVO |
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Through Beam Photoelectric Sensor, 0.3mm Min, 200mA, Rectangular | |
FGUM080P8001/S35L | IVO |
获取价格 |
Through Beam Photoelectric Sensor, 0.5mm Min, 200mA, Rectangular |