Datasheet > FGT313

FGT313

更新时间： 2024-11-03 09:34:19

品牌	Logo	应用领域
三垦 - SANKEN		栅
页数	文件大小	规格书
4页	170K
描述
Insulated Gate Bipolar Transistor

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中文翻译

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FGT313 数据手册

2-3 IGBT

Selection Guide

By VCES

VCES

(V)

(A)

(W)

Part Number

Package

330

400

600

FGT312

TO220F(FM20)

TO3PF(FM100)

TO3P(MT100)

FGT313

FGT412

FGT612

FGM622S

FGM603

FGM623S

MGD623N

MGD623S

150

Transistors

153

12 3 4

中文翻译

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型号	品牌	获取价格	描述	数据表
FGT612	SANKEN	获取价格	Insulated Gate Bipolar Transistor
FGUM020P8001/S35L	IVO	获取价格	Through Beam Photoelectric Sensor, 0.4mm Min, 200mA, Rectangular
FGUM030P6901/S35A	IVO	获取价格	Through Beam Photoelectric Sensor, 0.3mm Min, 200mA, Rectangular
FGUM030P8001/S35L	IVO	获取价格	Through Beam Photoelectric Sensor, 0.5mm Min, 200mA, Rectangular
FGUM050P6901/S35A	IVO	获取价格	Through Beam Photoelectric Sensor, 0.3mm Min, 200mA, Rectangular
FGUM050P8001/S35L	IVO	获取价格	Through Beam Photoelectric Sensor, 0.5mm Min, 200mA, Rectangular
FGUM080P6901/S35A	IVO	获取价格	Through Beam Photoelectric Sensor, 0.3mm Min, 200mA, Rectangular
FGUM080P8001/S35L	IVO	获取价格	Through Beam Photoelectric Sensor, 0.5mm Min, 200mA, Rectangular
FGUM120P8001/S35L	IVO	获取价格	Through Beam Photoelectric Sensor, 0.8mm Min, 200mA, Rectangular
FGV	SHIELD	获取价格	MAGNETIC SWITCHES