November 2014
FFPF08S60ST
8 A, 600 V STEALTHTM II Diode
Features
Description
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•
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Stealth Recovery trr = 30 ns (@ IF = 8 A)
Max Forward Voltage, VF = 3.4 V (@ TC = 25°C)
600 V Reverse Voltage and High Reliability
RoHS Compliant
The FFPF08S60S is STEALTH™ II diode with soft recovery
characteristics. It is silicon nitride passivated ion-implanted epi-
taxial planar construction.
This device is intended for use as freewheeling of boost diode in
switching power supplies and other power swithching applica-
tions. Their low stored charge and hyperfast soft recovery mini-
mize ringing and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Applications
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General Purpose
SMPS
Boost Diode in Continuous Mode Power Factor Corrections
Power Switching Circuits
Pin Assignments
1
2
TO-220F-2L
1. Cathode 2. Anode
1. Cathode
2. Anode
Absolute Maximum RatingsT
= 25°C unless otherwise noted
C
Symbol
Parameter
Value
600
600
600
8
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
V
V
V
A
A
Working Peak Reverse Voltage
DC Blocking Voltage
IF(AV)
IFSM
Average Rectified Forward Current
@ TC = 95 C
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
80
T
J, TSTG
Operating Junction and Storage Temperature
- 65 to +175
C
T
= 25°C unless otherwise noted
Thermal Characteristics
C
Symbol
Parameter
Max.
3.4
Unit
RJC
Maximum Thermal Resistance, Junction to Case
C/W
Information
Package Marking and Ordering
Part Number
Top Mark
Package
Packing Method Reel Size
Tape Width Quantity
FFPF08S60STTU
FFPF08S60ST
TO-220F-2L
Tube
N/A
N/A
50
©2011 Fairchild Semiconductor Corporation
FFPF08S60ST Rev. C2
1
www.fairchildsemi.com