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FFPF08S60ST_14 PDF预览

FFPF08S60ST_14

更新时间: 2024-11-12 01:23:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
5页 361K
描述
8 A, 600 V STEALTHTM II Diode

FFPF08S60ST_14 数据手册

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November 2014  
FFPF08S60ST  
8 A, 600 V STEALTHTM II Diode  
Features  
Description  
Stealth Recovery trr = 30 ns (@ IF = 8 A)  
Max Forward Voltage, VF = 3.4 V (@ TC = 25°C)  
600 V Reverse Voltage and High Reliability  
RoHS Compliant  
The FFPF08S60S is STEALTH™ II diode with soft recovery  
characteristics. It is silicon nitride passivated ion-implanted epi-  
taxial planar construction.  
This device is intended for use as freewheeling of boost diode in  
switching power supplies and other power swithching applica-  
tions. Their low stored charge and hyperfast soft recovery mini-  
mize ringing and electrical noise in many power switching circuits  
reducing power loss in the switching transistors.  
Applications  
General Purpose  
SMPS  
Boost Diode in Continuous Mode Power Factor Corrections  
Power Switching Circuits  
Pin Assignments  
1
2
TO-220F-2L  
1. Cathode 2. Anode  
1. Cathode  
2. Anode  
Absolute Maximum RatingsT  
= 25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
600  
600  
600  
8
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
V
V
V
A
A
Working Peak Reverse Voltage  
DC Blocking Voltage  
IF(AV)  
IFSM  
Average Rectified Forward Current  
@ TC = 95 C  
Non-repetitive Peak Surge Current  
60Hz Single Half-Sine Wave  
80  
T
J, TSTG  
Operating Junction and Storage Temperature  
- 65 to +175  
C  
T
= 25°C unless otherwise noted  
Thermal Characteristics  
C
Symbol  
Parameter  
Max.  
3.4  
Unit  
RJC  
Maximum Thermal Resistance, Junction to Case  
C/W  
Information  
Package Marking and Ordering  
Part Number  
Top Mark  
Package  
Packing Method Reel Size  
Tape Width Quantity  
FFPF08S60STTU  
FFPF08S60ST  
TO-220F-2L  
Tube  
N/A  
N/A  
50  
©2011 Fairchild Semiconductor Corporation  
FFPF08S60ST Rev. C2  
1
www.fairchildsemi.com  

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