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FFPF08S60ST_12 PDF预览

FFPF08S60ST_12

更新时间: 2024-11-25 12:23:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
5页 294K
描述
8A, 600V STEALTHTM II Rectifier

FFPF08S60ST_12 数据手册

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May 2012  
TM  
STEALTH II Rectifier  
FFPF08S60ST  
tm  
Features  
8A, 600V STEALTHTM II Rectifier  
The FFPF08S60ST is STEALTHTM II rectifier with soft recovery  
characteristics. It is silicon nitride passivated ion-implanted epi-  
taxial planar construction.  
High Speed Switching, trr < 30ns @ IF = 8A  
High Reverse Voltage and High Reliability  
RoHS component  
This device is intended for use as freewheeling of boost diode in  
switching power supplies and other power swithching applica-  
tions. Their low stored charge and hyperfast soft recovery mini-  
mize ringing and electrical noise in many power switching circuits  
reducing power loss in the switching transistors.  
Applications  
General Purpose  
Switching Mode Power Supply  
Boost Diode in continuous mode power factor corrections  
Power switching circuits  
Pin Assignments  
1
2
TO-220F-2L  
1. Cathode 2. Anode  
1. Cathode  
2. Anode  
T
= 25°C unless otherwise noted  
Absolute Maximum Ratings  
C
Symbol  
Parameter  
Value  
600  
600  
600  
8
Units  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
V
V
V
A
A
Working Peak Reverse Voltage  
DC Blocking Voltage  
IF(AV)  
IFSM  
Average Rectified Forward Current  
@ TC = 95 °C  
Non-repetitive Peak Surge Current  
60Hz Single Half-Sine Wave  
80  
T
J, TSTG  
Operating Junction and Storage Temperature  
- 65 to +150  
°C  
Thermal Characteristics  
Symbol  
Parameter  
Maximum Thermal Resistance, Junction to Case  
Max  
3.4  
Units  
RθJC  
°C/W  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
Tape Width  
Quantity  
F08S60ST  
FFPF08S60STTU  
TO-220F-2L  
-
-
50  
©2012 Fairchild Semiconductor Corporation  
FFPF08S60ST Rev. C0  
1
www.fairchildsemi.com  

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