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FFA60UP20DN PDF预览

FFA60UP20DN

更新时间: 2024-11-20 22:08:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 整流二极管局域网超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
4页 49K
描述
Ultrafast Rectifier

FFA60UP20DN 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-3PN包装说明:R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.8Is Samacsys:N
其他特性:FREE WHEELING DIODE应用:ULTRA FAST SOFT RECOVERY
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:R-PSFM-T3最大非重复峰值正向电流:300 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最大输出电流:30 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向恢复时间:0.04 µs
子类别:Rectifier Diodes表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

FFA60UP20DN 数据手册

 浏览型号FFA60UP20DN的Datasheet PDF文件第2页浏览型号FFA60UP20DN的Datasheet PDF文件第3页浏览型号FFA60UP20DN的Datasheet PDF文件第4页 
Ultrafast Rectifier  
FFA60UP20DN  
Features  
Ultrafast with soft recovery  
(@ I = 1A), < 40ns  
F
Reverse Voltage, 200V  
Forward Voltage (@ T = 100°C), < 1V  
C
TO-3P  
1
2
3
Applications  
Power switching circuits  
Output rectifiers  
1. Anode 2.Cathode 3. Anode  
Freewheeling diodes  
Switching mode power supply  
Absolute Maximum Ratings (per diode) T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
200  
30  
Units  
V
Peak Repetitive Reverse Voltage  
V
A
A
RRM  
I
I
Average Rectified Forward Current  
Non-repetitive Peak Surge Current  
@ T = 100°C  
C
F(AV)  
FSM  
300  
60Hz Single Half-Sine Wave  
T
T
Operating Junction and Storage Temperature  
- 65 to +150  
°C  
J, STG  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
R
Maximum Thermal Resistance, Junction to Case  
1.4  
°C/W  
θJC  
Electrical Characteristics (per diode) T =25 °C unless otherwise noted  
C
Symbol  
Parameter  
Min.  
Typ.  
Max.  
Units  
V
Maximum Instantaneous Forward Voltage  
V
FM  
*
I = 30A  
T
T
= 25 °C  
= 100 °C  
-
-
-
-
1.15  
1.0  
F
C
C
I = 30A  
F
I
Maximum Instantaneous Reverse Current  
µA  
RM  
*
@ rated V  
T
T
= 25 °C  
= 100 °C  
-
-
-
-
10  
100  
R
C
C
t
I
Q
Reverse Recovery Time  
Reverse Recovery Current  
Reverse Recovery Charge  
-
-
-
32  
2.4  
38.4  
-
-
-
ns  
A
nC  
rr  
rr  
rr  
(I =30A, di/dt = 200A/µs)  
F
t
Maximum Reverse Recovery Time  
-
-
-
40  
-
ns  
rr  
(I =1A, di/dt = 100A/µs)  
F
W
Avalanche Energy (L=40mH)  
2
mJ  
AVL  
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%  
©2004 Fairchild Semiconductor Corporation  
Rev. A, August 2004  

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