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FFAF10U40DNTU PDF预览

FFAF10U40DNTU

更新时间: 2024-11-18 13:07:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 二极管高压局域网超快速恢复能力电源高压超快恢复电源超快恢复二极管高压超快恢复二极管快速恢复二极管
页数 文件大小 规格书
4页 77K
描述
Rectifier Diode, 1 Phase, 2 Element, 10A, 400V V(RRM), Silicon, TO-3PF, 3 PIN

FFAF10U40DNTU 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-3PF包装说明:R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.74其他特性:FREE WHEELING DIODE
应用:ULTRA FAST SOFT RECOVERY POWER外壳连接:ISOLATED
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.4 V
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
最大非重复峰值正向电流:100 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:400 V
最大反向恢复时间:0.05 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

FFAF10U40DNTU 数据手册

 浏览型号FFAF10U40DNTU的Datasheet PDF文件第2页浏览型号FFAF10U40DNTU的Datasheet PDF文件第3页浏览型号FFAF10U40DNTU的Datasheet PDF文件第4页 
FFAF10U40DN  
Features  
Ultrafast with soft recovery  
Low forward voltage  
Applications  
Power switching circuits  
Output rectifiers  
Freewheeling diodes  
Switching mode power supply  
TO-3PF  
1
2
3
1. Anode 2.Cathode 3. Anode  
ULTRA FAST RECOVERY POWER RECTIFIER  
Absolute Maximum Ratings (per diode) TC=25°C unless otherwise noted  
Symbol  
VRRM  
IF(AV)  
IFSM  
Parameter  
Value  
400  
10  
Units  
Peak Repetitive Reverse Voltage  
V
A
A
Average Rectified Forward Current  
Non-repetitive Peak Surge Current  
@TC = 100°C  
100  
60Hz Single Half-Sine Wave  
TJ, TSTG  
Operating Junction and StorageTemperature  
- 65 to +150  
°C  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
RθJC  
Maximum Thermal Resistance, Junction to Case  
4.0  
°C/W  
Electrical Characteristics (per diode) TC=25 °C unless otherwise noted  
Symbol  
Parameter  
Min.  
Typ.  
Max.  
Units  
VFM  
Maximum Instantaneous Forward Voltage  
I F = 10A  
V
*
TC = 25 °C  
C = 100 °C  
-
-
-
-
1.4  
1.3  
I
F = 10A  
T
IRM  
Maximum Instantaneous Reverse Current  
@ rated VR  
µA  
*
TC = 25 °C  
C = 100 °C  
-
-
-
-
30  
300  
T
trr  
Irr  
Qrr  
Maximum Reverse Recovery Time  
Maximum Reverse Recovery Current  
Maximum Reverse Recovery Charge  
(IF =10A, di/dt = 200A/µs)  
-
-
-
-
-
-
50  
4.5  
113  
ns  
A
nC  
WAVL  
Avalanche Energy  
1.0  
-
-
mJ  
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%  
©2000 Fairchild Semiconductor International  
Rev. F, September 2000  

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