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FFAF10U170S PDF预览

FFAF10U170S

更新时间: 2024-11-20 22:31:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 二极管
页数 文件大小 规格书
4页 66K
描述
DAMPER DIODE

FFAF10U170S 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-3PF包装说明:R-PSFM-T2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.78其他特性:HIGH RELIABILITY
应用:HIGH VOLTAGE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):2.2 V
JESD-30 代码:R-PSFM-T2JESD-609代码:e0
最大非重复峰值正向电流:100 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:1700 V
最大反向恢复时间:0.14 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

FFAF10U170S 数据手册

 浏览型号FFAF10U170S的Datasheet PDF文件第2页浏览型号FFAF10U170S的Datasheet PDF文件第3页浏览型号FFAF10U170S的Datasheet PDF文件第4页 
FFAF10U170S  
Features  
High voltage and high reliability  
High speed switching  
Low forward voltage  
TO-3PF  
Applications  
1
2
Suitable for damper diode in horizontal  
deflection circuits  
1. Cathode  
2. Anode  
DAMPER DIODE  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
1700  
10  
Units  
V
Peak Repetitive Reverse Voltage  
V
A
A
RRM  
I
I
Average Rectified Forward Current  
Non-repetitive Peak Surge Current  
@ T = 125°C  
C
F(AV)  
FSM  
100  
60Hz Single Half-Sine Wave  
T
T
Operating Junction and Storage Temperature  
- 65 to +150  
°C  
J, STG  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
R
Maximum Thermal Resistance, Junction to Case  
1.5  
°C/W  
θJC  
Electrical Characteristics T =25 °C unless otherwise noted  
C
Symbol  
Parameter  
Min.  
Typ.  
Max.  
Units  
V
Maximum Instantaneous Forward Voltage  
V
FM  
*
I = 10A  
T
T
= 25 °C  
= 125 °C  
-
-
-
-
2.2  
2.0  
F
C
C
I = 10A  
F
I
Maximum Instantaneous Reverse Current  
mA  
RM  
*
@ rated V  
T
T
= 25 °C  
= 125 °C  
-
-
-
-
0.1  
10  
R
C
C
t
t
Maximum Reverse Recovery Time  
-
-
-
-
-
-
140  
400  
13  
ns  
ns  
V
rr  
(I =1A, di/dt = 50A/µs)  
F
Maximum Forward Recovery Time  
fr  
(I =6.5A, di/dt = 50A/µs)  
F
V
Maximum Forward Recovery Voltage  
FRM  
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%  
©2001 Fairchild Semiconductor Corporation  
Rev. A, June 2001  

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