May 2012
FDS86540
N-Channel PowerTrench® MOSFET
60 V, 18 A, 4.5 mΩ
Features
General Description
Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 18 A
Max rDS(on) = 5.4 mΩ at VGS = 8 V, ID = 16.5 A
High performance trench technologh for extremely low rDS(on)
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
High power and current handing capability in a widely used
surface mount package
100% UIL Tested
RoHS Compliant
Applications
Primary Switch in isolated DC-DC
Synchronous Rectifier
Load Switch
D
D
G
S
S
S
4
3
2
1
5
6
7
8
D
D
D
D
D
D
G
SO-8
S
S
Pin 1
S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
60
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
V
V
±20
18
ID
A
mJ
W
120
194
5.0
EAS
PD
Single Pulse Avalanche Energy
Power Dissipation
(Note 3)
TC = 25 °C
TA = 25 °C
(Note 1)
Power Dissipation
(Note 1a)
2.5
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
25
50
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
12 mm
Quantity
FDS86540
FDS86540
SO-8
13’’
2500 units
1
©2012 Fairchild Semiconductor Corporation
FDS86540 Rev. C
www.fairchildsemi.com