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FDS86540 PDF预览

FDS86540

更新时间: 2022-04-07 13:38:06
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
6页 262K
描述
N-Channel PowerTrench® MOSFET 60 V, 18 A, 4.5 mΩ

FDS86540 数据手册

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May 2012  
FDS86540  
N-Channel PowerTrench® MOSFET  
60 V, 18 A, 4.5 mΩ  
Features  
General Description  
„ Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 18 A  
„ Max rDS(on) = 5.4 mΩ at VGS = 8 V, ID = 16.5 A  
„ High performance trench technologh for extremely low rDS(on)  
This N-Channel MOSFET has been designed specifically to  
improve the overall efficiency and to minimize switch node  
ringing of DC/DC converters using either synchronous or  
conventional switching PWM controllers.It has been optimized  
for low gate charge, low rDS(on), fast switching speed and body  
diode reverse recovery performance.  
„ High power and current handing capability in a widely used  
surface mount package  
„ 100% UIL Tested  
„ RoHS Compliant  
Applications  
„ Primary Switch in isolated DC-DC  
„ Synchronous Rectifier  
„ Load Switch  
D
D
G
S
S
S
4
3
2
1
5
6
7
8
D
D
D
D
D
D
G
SO-8  
S
S
Pin 1  
S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted  
Symbol  
VDS  
VGS  
Parameter  
Ratings  
60  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current -Continuous  
-Pulsed  
V
V
±20  
18  
ID  
A
mJ  
W
120  
194  
5.0  
EAS  
PD  
Single Pulse Avalanche Energy  
Power Dissipation  
(Note 3)  
TC = 25 °C  
TA = 25 °C  
(Note 1)  
Power Dissipation  
(Note 1a)  
2.5  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
RθJC  
RθJA  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
(Note 1)  
25  
50  
°C/W  
(Note 1a)  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
Tape Width  
12 mm  
Quantity  
FDS86540  
FDS86540  
SO-8  
13’’  
2500 units  
1
©2012 Fairchild Semiconductor Corporation  
FDS86540 Rev. C  
www.fairchildsemi.com  

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