5秒后页面跳转
FDA33N25 PDF预览

FDA33N25

更新时间: 2024-11-09 03:36:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
8页 639K
描述
N-Channel MOSFET

FDA33N25 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-3PN
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.71
雪崩能效等级(Eas):918 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:250 V最大漏极电流 (Abs) (ID):33 A
最大漏极电流 (ID):33 A最大漏源导通电阻:0.094 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):245 W最大脉冲漏极电流 (IDM):132 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDA33N25 数据手册

 浏览型号FDA33N25的Datasheet PDF文件第2页浏览型号FDA33N25的Datasheet PDF文件第3页浏览型号FDA33N25的Datasheet PDF文件第4页浏览型号FDA33N25的Datasheet PDF文件第5页浏览型号FDA33N25的Datasheet PDF文件第6页浏览型号FDA33N25的Datasheet PDF文件第7页 
September 2007  
TM  
UniFET  
FDA33N25  
tm  
N-Channel MOSFET  
250V, 33A, 0.094Ω  
Features  
Description  
RDS(on) = 0.088( Typ.)@ VGS = 10V, ID = 16.5A  
Low gate charge ( Typ. 36nC)  
Low Crss ( Typ. 35pF)  
These N-Channel enhancement mode power field effect transis-  
tors are produced using Fairchild’s proprietary, planar stripe,  
DMOS technology.  
This advance technology has been especially tailored to mini-  
mize on-state resistance, provide superior switching perfor-  
mance, and withstand high energy pulse in the avalanche and  
commutation mode. These devices are well suited for high effi-  
cient switching mode power supplies and active power factor  
correction.  
Fast switching  
Improved dv/dt capability  
RoHS compliant  
D
G
TO-3PN  
G D S  
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted  
Symbol  
VDSS  
VGSS  
Parameter  
Ratings  
250  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
V
V
±30  
-Continuous (TC = 25oC)  
-Continuous (TC = 100oC)  
- Pulsed  
33  
ID  
Drain Current  
A
21  
IDM  
Drain Current  
(Note 1)  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
132  
A
mJ  
A
EAS  
IAR  
Single Pulsed Avalanche Energy  
Avalanche Current  
918  
33  
EAR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
24.6  
4.5  
mJ  
V/ns  
W
W/oC  
oC  
(TC = 25oC)  
- Derate above 25oC  
245  
PD  
Power Dissipation  
1.96  
-55 to +150  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
Maximum Lead Temperature for Soldering Purpose,  
1/8” from Case for 5 Seconds  
300  
oC  
Thermal Characteristics  
Symbol  
Parameter  
Thermal Resistance, Junction to Case  
Thermal Resistance, Case to Sink Typ.  
Thermal Resistance, Junction to Ambient  
Ratings  
0.51  
Units  
RθJC  
RθCS  
RθJA  
0.24  
oC/W  
40  
©2007 Fairchild Semiconductor Corporation  
FDA33N25 Rev. A  
1
www.fairchildsemi.com  

与FDA33N25相关器件

型号 品牌 获取价格 描述 数据表
FDA-37PF HRS

获取价格

FD TYPE CONNECTOR FOR RIBBON CABLE
FDA-37SF HRS

获取价格

FD TYPE CONNECTOR FOR RIBBON CABLE
FDA38N30 FAIRCHILD

获取价格

N-Channel MOSFET 300V, 38A, 0.085Ω
FDA38N30 ONSEMI

获取价格

功率 MOSFET,N 沟道,UniFETTM,300V,38A,85mΩ,TO-3P
FDA3BJ106K++4KD5 AISHI

获取价格

Film DC-Link
FDA3BJ306M++4MD5 AISHI

获取价格

Film DC-Link
FDA3BJ356M++4MD5 AISHI

获取价格

Film DC-Link
FDA3BK105G++2GL5 AISHI

获取价格

Film DC-Link
FDA3BK106K++4KB5 AISHI

获取价格

Film DC-Link
FDA3BK205G++2GL5 AISHI

获取价格

Film DC-Link