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FDA38N30 PDF预览

FDA38N30

更新时间： 2024-12-01 11:13:55
品牌 Logo 应用领域
安森美 - ONSEMI 局域网PC开关脉冲晶体管
页数 文件大小 规格书
10页 1238K
描述
功率 MOSFET，N 沟道，UniFETTM，300V，38A，85mΩ，TO-3P

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中文翻译

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FDA38N30 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：0.97
Samacsys Confidence：3Samacsys Status：Released
Samacsys PartID：1006291Samacsys Pin Count：3
Samacsys Part Category：MOSFET (N-Channel)Samacsys Package Category：Transistor Outline, Vertical
Samacsys Footprint Name：FDA38N30Samacsys Released Date：2019-01-03 13:46:16
Is Samacsys：N雪崩能效等级（Eas）：1200 mJ
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：300 V
最大漏极电流 (Abs) (ID)：38 A最大漏极电流 (ID)：38 A
最大漏源导通电阻：0.085 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：312 W
最大脉冲漏极电流 (IDM)：150 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FDA38N30 数据手册

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