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FD160H03A5B PDF预览

FD160H03A5B

更新时间: 2024-11-26 08:55:39
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
3页 145K
描述
Rectifier Diode, 1 Element, 300V V(RRM),

FD160H03A5B 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84配置:SINGLE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.25 V
元件数量:1最大重复峰值反向电压:300 V
子类别:Rectifier DiodesBase Number Matches:1

FD160H03A5B 数据手册

 浏览型号FD160H03A5B的Datasheet PDF文件第2页浏览型号FD160H03A5B的Datasheet PDF文件第3页 
PD - 20993 rev.B  
FD160H03A5B  
FRED Die in Wafer Form  
300V  
VF = 1.25V  
(max.)  
z 100% Tested at Probe c  
z Available in Tape and Reel (upon request),  
Chip Pack, and Sawn on Film d  
5" Wafer  
Electrical Characteristics  
Parameter  
Description  
Min  
–––  
300V  
–––  
–––  
Typ  
–––  
–––  
–––  
38ns  
Max  
1.25V  
–––  
60µA  
–––  
Test Conditions  
VFM  
VRRM  
IRM  
Maximum Forward Voltage  
TJ = 25°C, IF = 30A  
Minimum Reverse Breakdown Voltage  
Max. Reverse Leakage Current  
Typ. Reverse Recovery Time  
TJ = 25°C, IRRM = 100µA  
TJ = 25°C, VRRM = 300V  
IF = 30A, di/dt = 200A/µs, VR = 200V  
trr  
Mechanical Data  
Nominal Back Metal Composition, Thickness:  
Nominal Front Metal Composition, Thickness:  
Dimensions:  
Cr-Ni-Ag ( 1kA-2kA-3kA)  
99%Al, 1%Si (3ꢄꢅ)  
0.160" x 0.160" (see drawing)  
125 mm  
14 mꢆꢇꢈ  
56 ±10 µm  
0.25 mm Diameter Minimum  
Store in original container, in dessicated  
nitrogen, with no contamination  
For optimum electrical results, die attach  
temperature should not exceed 300 °C  
30EPH03  
Wafer Diameter:  
Wafer Thickness:  
Scribe Line Width  
Reject Ink Dot Size  
Recommended Storage Environment:  
Recommended Die Attach Conditions:  
Reference Package  
Die Outline  
NOTES:  
40 (1.57)  
Wafer flat alligned with  
side b of the die  
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (MILS).  
2. CONTROLLING DIMENSION (INCH):  
a
c
0.35 ± 0.01  
(14 ± 0.4)  
3. DIMENSIONS AND TOLERANCES:  
a = 4.06 +0, - 0.01  
(160 +0, - 0.4)  
b = 4.06 +0, - 0.01  
(160 +0, - 0.4)  
C
c = 3.63 +0, - 0.01  
(142.8 +0, - 0.4)  
A
d = 3.63 +0, - 0.01  
(142.8 +0, - 0.4)  
4. LETTER DESIGNATION:  
A = Anode (Top Metal)  
C = Cathode (Back Metal)  
5. SAWING:  
Ø
125 (4.92)  
Recommended Blade  
SEMITEC S1025 QS00 Blade  
Note:  
c The above data sheet is based on IR sample testing under certain predetermined and assumed conditions, and is  
provided for illustration purposes only. Customers are encouraged to perform testing in actual proposed packaged  
and use conditions. IR die products are tested using IR-based quality assurance procedures and are manufactured  
using IR’s established processes. Programs for customer-specified testing are available upon request. IR has  
experienced assembly yields of generally 95% or greater for individual die; however, customer’s results may vary.  
Estimates such as those described and set forth in this data sheet for semiconductor die will vary depending on a  
number of packaging, handling, use and other factors. Sold die may not perform on an equivalent basis to standard  
package products and are therefore offered with a limited warranty as described in IR’s applicable standard terms  
and conditions of sale. All IR die sales are subject to IR’s applicable standard terms and conditions of sale, which  
are available upon request.  
ꢀꢁꢂꢀ8ꢂꢀꢃ  
d Part number shown is for die in waveform. Contact factory for these other options.  
Document Number: 93778  
www.vishay.com  
1

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