Datasheet > FD160H06A5R

FD160H06A5R

更新时间： 2024-11-21 21:08:47

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
3页	121K
描述
Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, WAFER

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FD160H06A5R 技术参数

是否Rohs认证：	不符合	生命周期：	Active
零件包装代码：	WAFER	包装说明：	O-XUUC-N1
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.40	风险等级：	5.82
应用：	GENERAL PURPOSE	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	2.6 V	JESD-30 代码：	O-XUUC-N1
元件数量：	1	相数：	1
端子数量：	1	封装主体材料：	UNSPECIFIED
封装形状：	ROUND	封装形式：	UNCASED CHIP
认证状态：	Not Qualified	最大重复峰值反向电压：	600 V
最大反向恢复时间：	0.02 µs	子类别：	Rectifier Diodes
表面贴装：	YES	端子形式：	NO LEAD
端子位置：	UPPER	Base Number Matches：	1

FD160H06A5R 数据手册

PD - 20533 revE

FD160H06A5B

FRED Die in Wafer Form

600V

V_F= 2.6 V

(max.)

z 100% Tested at Probe c

z Available in Tape and Reel (upon request),

Chip Pack, and Sawn on Film d

5" Wafer

Electrical Characteristics @ T = 25°C (unless otherwise specified)

Parameter

V_FM

V_RRM

I_RM

t_rr

Description

Min

Typ

–––

Max

Test Conditions

Maximum Forward Voltage

–––

2.6V T_J= 25°C, I_F= 30A

Minimum Reverse Breakdown Voltage 600V

Max. Reverse Leakage Current

Typ. Reverse Recovery Time

–––

––– T_J= 25°C, I_RRM= 200µA

50µA T_J= 25°C, V_RRM= 600V

––– I_F= 1A, di/dt = 50A/µs, V_R= 30V

––– I_F= 30A, di/dt = 200A/µs, V_R= 200V

––– T_J= 125°C, I_F= 30A, di/dt = 200A/µs, V_R= 200V

–––

28ns

31ns

345nC

Q_rr

Typ. Reverse Recovery Charge

Mechanical Data

Nominal Back Metal Composition, Thickness:

Nominal Front Metal Composition, Thickness:

Dimensions:

Cr-Ni-Ag ( 1kA-2kA-3kA)

99%Al, 1%Si (3µm)

0.160" x 0.160" (see drawing)

125 mm

14 mils

90 ±10 µm

0.25 mm Diameter Minimum

Store in original container, in dessicated

nitrogen, with no contamination

For optimum electrical results, die attach

temperature should not exceed 300 °C

30EPH06, 30ETH06 Series

Wafer Diameter:

Wafer Thickness:

Scribe Line Width

Reject Ink Dot Size

Recommended Storage Environment:

Recommended Die Attach Conditions:

Reference Packaged Part

Die Outline

NOTES:

40 (1.57)

Wafer flat alligned with

side b of the die

1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (MILS).

2. CONTROLLING DIMENSION (INCH):

0.35 ± 0.01

(14 ± 0.4)

3. DIMENSIONS AND TOLERANCES:

a = 4.06 +0, - 0.01

(160 +0, - 0.4)

b = 4.06 +0, - 0.01

(160 +0, - 0.4)

c = 3.00 +0, - 0.01

(118.1 +0, - 0.4)

d = 3.00 +0, - 0.01

(118.1 +0, - 0.4)

4. LETTER DESIGNATION:

A = Anode (Top Metal)

C = Cathode (Back Metal)

5. SAWING:

125 (4.92)

Recommended Blade

SEMITEC S1025 QS00 Blade

Note:

c The above data sheet is based on IR sample testing under certain predetermined and assumed conditions, and is

provided for illustration purposes only. Customers are encouraged to perform testing in actual proposed packaged

and use conditions. IR die products are tested using IR-based quality assurance procedures and are manufactured

using IR’s established processes. Programs for customer-specified testing are available upon request. IR has

experienced assembly yields of generally 95% or greater for individual die; however, customer’s results may vary.

Estimates such as those described and set forth in this data sheet for semiconductor die will vary depending on a

number of packaging, handling, use and other factors. Sold die may not perform on an equivalent basis to standard

package products and are therefore offered with a limited warranty as described in IR’s applicable standard terms

and conditions of sale. All IR die sales are subject to IR’s applicable standard terms and conditions of sale, which

are available upon request.

08/30/06

d Part number shown is for die in waveform. Contact factory for these other options.

Document Number: 93779

www.vishay.com

12 3

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与FD160H06A5R相关器件

型号	品牌	获取价格	描述	数据表
FD160S04A5B	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 400V V(RRM), Silicon, 5 INCH, WAFER
FD160S04A5F	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 400V V(RRM), Silicon, 5 INCH, WAFER
FD160S04A5P	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 400V V(RRM), Silicon, 5 INCH, WAFER
FD160S04A5R	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 400V V(RRM), Silicon, 5 INCH, WAFER
FD1617	PANASONIC	获取价格	RF Transformer, 380MHz Min, 430MHz Max, 1:2
FD1618	PANASONIC	获取价格	RF Transformer, 880MHz Min, 960MHz Max, 1:1
FD1619	PANASONIC	获取价格	RF Transformer, 1700MHz Min, 2000MHz Max, 1:1
FD1620	PANASONIC	获取价格	RF Transformer, 880MHz Min, 960MHz Max, 1:2
FD1622	PANASONIC	获取价格	RF Transformer, 824MHz Min, 894MHz Max
FD1629	PANASONIC	获取价格	RF Transformer, 1700MHz Min, 2000MHz Max

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