Datasheet > FD160H02A5B

FD160H02A5B

更新时间： 2024-11-06 21:03:31

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
3页	144K
描述
Rectifier Diode, 1 Phase, 1 Element, 200V V(RRM), Silicon, 5 INCH, WAFER

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技术参数
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FD160H02A5B 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	WAFER	包装说明：	S-XUUC-N1
针数：	1	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.40
风险等级：	5.84	应用：	GENERAL PURPOSE
外壳连接：	CATHODE	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	1.08 V	JESD-30 代码：	S-XUUC-N1
湿度敏感等级：	1	元件数量：	1
相数：	1	端子数量：	1
封装主体材料：	UNSPECIFIED	封装形状：	SQUARE
封装形式：	UNCASED CHIP	峰值回流温度（摄氏度）：	225
认证状态：	Not Qualified	最大重复峰值反向电压：	200 V
最大反向恢复时间：	0.031 µs	子类别：	Rectifier Diodes
表面贴装：	YES	端子形式：	NO LEAD
端子位置：	UPPER	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

FD160H02A5B 数据手册

I - 0516J rev.B

FD160H02A5B

FRED Die in Wafer Form

200V

V_F= 1.08V

(max.)

z 100% Tested at Probe c

z Available in Tape and Reel (upon request),

Chip Pack, and Sawn on Film d

5" Wafer

Electrical Characteristics

Parameter

Description

Min

–––

200V

–––

Typ

–––

31ns

Max

1.08V

–––

50µA

–––

Test Conditions

V_FM

V_RRM

I_RM

Maximum Forward Voltage

T_J= 25°C, I_F= 30A

Minimum Reverse Breakdown Voltage

Max. Reverse Leakage Current

Typ. Reverse Recovery Time

T_J= 25°C, I_RRM= 100µA

T_J= 25°C, V_RRM= 200V

I_F= 30A, di/dt = 200A/µs, V_R= 100V

t_rr

Mechanical Data

Nominal Back Metal Composition, Thickness:

Nominal Front Metal Composition, Thickness:

Dimensions:

Cr-Ni-Ag ( 1kA-2kA-3kA)

99%Al, 1%Si (3µm)

0.160" x 0.160" (see drawing)

125 mm

14 mils

66 ±10 µm

0.25 mm Diameter Minimum

Store in original container, in dessicated

nitrogen, with no contamination

For optimum electrical results, die attach

temperature should not exceed 300 °C

UFB60FA20

Wafer Diameter:

Wafer Thickness:

Scribe Line Width

Reject Ink Dot Size

Recommended Storage Environment:

Recommended Die Attach Conditions:

Reference Packaged Part

Die Outline

NOTES:

40 (1.57)

Wafer flat alligned with

side b of the die

1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (MILS).

2. CONTROLLING DIMENSION (INCH):

0.35 ± 0.01

(14 ± 0.4)

3. DIMENSIONS AND TOLERANCES:

a = 4.06 +0, - 0.01

(160 +0, - 0.4)

b = 4.06 +0, - 0.01

(160 +0, - 0.4)

c = 3.64 +0, - 0.01

(143.1 +0, - 0.4)

d = 3.64 +0, - 0.01

(143.1 +0, - 0.4)

4. LETTER DESIGNATION:

A = Anode (Top Metal)

C = Cathode (Back Metal)

5. SAWING:

125 (4.92)

Recommended Blade

SEMITEC S1025 QS00 Blade

Note:

c The above data sheet is based on IR sample testing under certain predetermined and assumed conditions, and is

provided for illustration purposes only. Customers are encouraged to perform testing in actual proposed packaged

and use conditions. IR die products are tested using IR-based quality assurance procedures and are manufactured

using IR’s established processes. Programs for customer-specified testing are available upon request. IR has

experienced assembly yields of generally 95% or greater for individual die; however, customer’s results may vary.

Estimates such as those described and set forth in this data sheet for semiconductor die will vary depending on a

number of packaging, handling, use and other factors. Sold die may not perform on an equivalent basis to standard

package products and are therefore offered with a limited warranty as described in IR’s applicable standard terms

and conditions of sale. All IR die sales are subject to IR’s applicable standard terms and conditions of sale, which

are available upon request.

ꢀꢁꢂꢀ8ꢂꢀꢃ

d Part number shown is for die in waveform. Contact factory for these other options.

Document Number: 93777

www.vishay.com

12 3

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与FD160H02A5B相关器件

型号	品牌	获取价格	描述	数据表
FD160H02A5F	INFINEON	获取价格	Rectifier Diode, 1 Element, 200V V(RRM),
FD160H02A5P	INFINEON	获取价格	Rectifier Diode, 1 Element, 200V V(RRM),
FD160H02A5P	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, Silicon, 5 INCH, WAFER
FD160H02A5R	INFINEON	获取价格	Rectifier Diode, 1 Element, 200V V(RRM),
FD160H02A5R	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, Silicon, 5 INCH, WAFER
FD160H03A5B	VISHAY	获取价格	Rectifier Diode, 1 Element, 300V V(RRM),
FD160H03A5F	VISHAY	获取价格	Rectifier Diode, 1 Element, 300V V(RRM),
FD160H03A5R	VISHAY	获取价格	Rectifier Diode, 1 Element, 300V V(RRM),
FD160H06A5B	INFINEON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, WAFER
FD160H06A5BPBF	INFINEON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, WAFER

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