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FD1600R17KF6C_B2 PDF预览

FD1600R17KF6C_B2

更新时间: 2024-11-25 10:31:59
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管双极性晶体管
页数 文件大小 规格书
10页 308K
描述
1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode

FD1600R17KF6C_B2 数据手册

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Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FD1600/1200R17KF6C_B2  
1700V IGBT Modul mit low loss IGBT der 2.ten Generation und softer EmCon Diode  
1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode  
IGBT-Wechselrichter / IGBT-inverter  
chstzulässige Werte / maximum rated values  
Vorläufige Daten / preliminary data  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
TÝÎ = 25°C  
TÝÎ = 125°C  
1700  
1700  
V†Š»  
V
Kollektor-Dauergleichstrom  
DC-collector current  
T† = 80°C, TÝÎ = 150°C  
T† = 25°C, TÝÎ = 150°C  
I† ÒÓÑ  
I†  
1600  
2600  
A
A
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
t« = 1 ms  
I†ç¢  
PÚÓÚ  
3200  
12,5  
A
kW  
V
Gesamt-Verlustleistung  
total power dissipation  
T† = 25°C, TÝÎ = 150°C  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
V•Š»  
+/- 20  
Charakteristische Werte / characteristic values  
min. typ. max.  
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
I† = 1600 A, V•Š = 15 V  
I† = 1600 A, V•Š = 15 V  
TÝÎ = 25°C  
TÝÎ = 125°C  
2,60 3,10  
3,10 3,60  
V
V
V†Š ÙÈÚ  
V•ŠÚÌ  
Q•  
Gate-Schwellenspannung  
gate threshold voltage  
I† = 130 mA, V†Š = V•Š, TÝÎ = 25°C  
4,5  
5,5  
6,5  
V
µC  
Â
Gateladung  
gate charge  
V•Š = -15 V ... +15 V  
19,0  
0,66  
105  
5,30  
Interner Gatewiderstand  
internal gate resistor  
TÝÎ = 25°C  
R•ÍÒÚ  
CÍþÙ  
Eingangskapazität  
input capacitance  
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  
V†Š = 1700 V, V•Š = 0 V, TÝÎ = 25°C  
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C  
nF  
nF  
Rückwirkungskapazität  
reverse transfer capacitance  
CØþÙ  
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
I†Š»  
I•Š»  
tÁ ÓÒ  
5,0 mA  
400 nA  
Gate-Emitter Reststrom  
gate-emitter leakage current  
Einschaltverzögerungszeit (ind. Last)  
turn-on delay time (inductive load)  
I† = 1600 A, V†Š = 900 V  
V•Š = ±15 V  
R•ÓÒ = 0,9 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
0,30  
0,30  
µs  
µs  
Anstiegszeit (induktive Last)  
rise time (inductive load)  
I† = 1600 A, V†Š = 900 V  
V•Š = ±15 V  
R•ÓÒ = 0,9 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
0,19  
0,19  
µs  
µs  
tØ  
tÁ ÓËË  
tË  
Abschaltverzögerungszeit (ind. Last)  
turn-off delay time (inductive load)  
I† = 1600 A, V†Š = 900 V  
V•Š = ±15 V  
R•ÓËË = 0,9 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
1,20  
1,20  
µs  
µs  
Fallzeit (induktive Last)  
fall time (inductive load)  
I† = 1600 A, V†Š = 900 V  
V•Š = ±15 V  
R•ÓËË = 0,9 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
0,15  
0,16  
µs  
µs  
Einschaltverlustenergie pro Puls  
turn-on energy loss per pulse  
I† = 1600 A, V†Š = 900 V, L» = 50 nH  
V•Š = ±15 V  
R•ÓÒ = 0,9 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
mJ  
mJ  
EÓÒ  
EÓËË  
430  
670  
Abschaltverlustenergie pro Puls  
turn-off energy loss per pulse  
I† = 1600 A, V†Š = 900 V, L» = 50 nH  
V•Š = ±15 V  
R•ÓËË = 0,9 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
mJ  
mJ  
Kurzschlussverhalten  
SC data  
V•Š ù 15 V, V†† = 1000 V  
I»†  
V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt  
pro IGBT / per IGBT  
pro IGBT / per IGBT  
t« ù 10 µs, TÝÎ = 125°C  
6400  
A
Innerer Wärmewiderstand  
thermal resistance, junction to case  
RÚÌœ†  
RÚ̆™  
10,0 K/kW  
Übergangs-Wärmewiderstand  
thermal resistance, case to heatsink  
13,0  
K/kW  
ð«ÈÙÚþ = 1 W/(m·K)  
/
ðÃØþÈÙþ = 1 W/(m·K)  
prepared by: Seidelmann Thomas  
approved by: Thomas Schütze  
date of publication: 2008-07-15  
revision: 2.0  
1

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