Datasheet > FD1600R17KF6C_B2

FD1600R17KF6C_B2

更新时间： 2024-11-06 10:31:59

品牌	Logo	应用领域
英飞凌 - INFINEON		二极管双极性晶体管
页数	文件大小	规格书
10页	308K
描述
1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode

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FD1600R17KF6C_B2 数据手册

Technische Information / technical information

IGBT-Module

IGBT-modules

FD1600/1200R17KF6C_B2

1700V IGBT Modul mit low loss IGBT der 2.ten Generation und softer EmCon Diode

1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode

IGBT-Wechselrichter / IGBT-inverter

Höchstzulässige Werte / maximum rated values

Vorläufige Daten / preliminary data

Kollektor-Emitter-Sperrspannung

collector-emitter voltage

TÝÎ = 25°C

TÝÎ = 125°C

1700

V†Š»

Kollektor-Dauergleichstrom

DC-collector current

T† = 80°C, TÝÎ = 150°C

T† = 25°C, TÝÎ = 150°C

I† ÒÓÑ

I†

1600

2600

Periodischer Kollektor Spitzenstrom

repetitive peak collector current

t« = 1 ms

I†ç¢

PÚÓÚ

3200

12,5

Gesamt-Verlustleistung

total power dissipation

T† = 25°C, TÝÎ = 150°C

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage

V•Š»

+/- 20

Charakteristische Werte / characteristic values

min. typ. max.

Kollektor-Emitter Sättigungsspannung

collector-emitter saturation voltage

I† = 1600 A, V•Š = 15 V

TÝÎ = 25°C

TÝÎ = 125°C

2,60 3,10

3,10 3,60

V†Š ÙÈÚ

V•ŠÚÌ

Q•

Gate-Schwellenspannung

gate threshold voltage

I† = 130 mA, V†Š = V•Š, TÝÎ = 25°C

4,5

5,5

6,5

µC

Gateladung

gate charge

V•Š = -15 V ... +15 V

19,0

0,66

105

5,30

Interner Gatewiderstand

internal gate resistor

TÝÎ = 25°C

R•ÍÒÚ

CÍþÙ

Eingangskapazität

input capacitance

f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V

V†Š = 1700 V, V•Š = 0 V, TÝÎ = 25°C

V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C

Rückwirkungskapazität

reverse transfer capacitance

CØþÙ

Kollektor-Emitter Reststrom

collector-emitter cut-off current

I†Š»

I•Š»

tÁ ÓÒ

5,0 mA

400 nA

Gate-Emitter Reststrom

gate-emitter leakage current

Einschaltverzögerungszeit (ind. Last)

turn-on delay time (inductive load)

I† = 1600 A, V†Š = 900 V

V•Š = ±15 V

R•ÓÒ = 0,9 Â

TÝÎ = 25°C

TÝÎ = 125°C

0,30

µs

Anstiegszeit (induktive Last)

rise time (inductive load)

I† = 1600 A, V†Š = 900 V

V•Š = ±15 V

R•ÓÒ = 0,9 Â

TÝÎ = 25°C

TÝÎ = 125°C

0,19

µs

tØ

tÁ ÓËË

tË

Abschaltverzögerungszeit (ind. Last)

turn-off delay time (inductive load)

I† = 1600 A, V†Š = 900 V

V•Š = ±15 V

R•ÓËË = 0,9 Â

TÝÎ = 25°C

TÝÎ = 125°C

1,20

µs

Fallzeit (induktive Last)

fall time (inductive load)

I† = 1600 A, V†Š = 900 V

V•Š = ±15 V

R•ÓËË = 0,9 Â

TÝÎ = 25°C

TÝÎ = 125°C

0,15

0,16

µs

Einschaltverlustenergie pro Puls

turn-on energy loss per pulse

I† = 1600 A, V†Š = 900 V, L» = 50 nH

V•Š = ±15 V

R•ÓÒ = 0,9 Â

TÝÎ = 25°C

TÝÎ = 125°C

EÓÒ

EÓËË

430

670

Abschaltverlustenergie pro Puls

turn-off energy loss per pulse

I† = 1600 A, V†Š = 900 V, L» = 50 nH

V•Š = ±15 V

R•ÓËË = 0,9 Â

TÝÎ = 25°C

TÝÎ = 125°C

Kurzschlussverhalten

SC data

V•Š ù 15 V, V†† = 1000 V

I»†

V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt

pro IGBT / per IGBT

t« ù 10 µs, TÝÎ = 125°C

6400

Innerer Wärmewiderstand

thermal resistance, junction to case

RÚÌœ†

RÚÌ†™

10,0 K/kW

Übergangs-Wärmewiderstand

thermal resistance, case to heatsink

13,0

K/kW

ð«ÈÙÚþ = 1 W/(m·K)

ðÃØþÈÙþ = 1 W/(m·K)

prepared by: Seidelmann Thomas

approved by: Thomas Schütze

date of publication: 2008-07-15

revision: 2.0

12 3 4 5 6 7...10

中文翻译

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