Datasheet > FCR0330

FCR0330

更新时间： 2024-09-18 12:27:03

品牌	Logo	应用领域
戈采 - FCI		可控硅整流器
页数	文件大小	规格书
1页	136K
描述
0.3 Amp Silicon Controlled Rectifiers VOID-FREE GLASS PASSIVATED CHIPS

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FCR0330 数据手册

Data Sheet

0.3 Amp Silicon

Controlled Rectifiers

Mechanical Dimensions

Description

TO-92

1. CATHODE

2. GATE

3. ANODE

Features

n DIRECTLY DRIVEN WITH IC

AND MOS DEVICE

n AVAILABLE IN VOLTAGE RATINGS

FROM 200 TO 400 VOLTS

n VOID-FREE GLASS PASSIVATED CHIPS

n SENSITIVE GATE TRIGGER CURRENT

Maximum Ratings and Electrical Characteristics

Symbol

Value

Units

Repetitive Peak Off-State Voltage and

V_DRM

V_RRM

Volts

Repetitive Peak Reverse Voltage @ T_C= 125^oC

FCR0320

FCR0330

FCR0340

200

300

400

RMS On-State Current @ T_C= 50^oC and

I_T(AV)

V_TSM

0.3

Amps

Conduction Angle of 180^o

Peak-Surge On-State Current

One cycle @ 50Hz or 60Hz

Peak Gate-Trigger Current for 3µs max.

Peak Gate-Power Dissipation @ I_GT< I_GTM

Average Gate-Power Dissipation

I_GTM

P_GM

0.1

Amps

Watts

P_G(AV)

0.05

Watts

Peak Off-State Current (1)

T = 25^oC

I_DRM

I_RRM

200

µAmps

@ Rated Reverse Voltage T_C^C= 125^oC

Maximum On-State Voltage @ T_C= 25^oC and I_T= 0.3A

DC Holding Current (1), Gate Open, T_C= 25^oC

V_TM

I_HO

1.7

Volts

mAmps

Volts/µsec

Critical Rate-Of-Rise of Off-State Voltage (1)

Gate Open, T_C= 110^oC

Critical

dV/dt

DC Gate -Trigger Current for Anode (2)

DC Gate -Trigger Voltage for Anode (2)

I_GT

V_GT

T_gt

200

0.8

2.2

µAmps

Volts

Gate-Controlled Turn-On Time, t_D+ t_R

I_GT= 10mA, T_C= 25^oC

µsec

Typical Thermal Resistance Junction to Case

Storage Temperature Range

R_θJC

T_STG

^oC/Watt

^oC

-40 to 150

-40 to 110

Operating Temperature Range

T_OPER

Notes:

(1) R_G-K= 1kΩ.

(2) Voltage = 7Vdc, R_L= 100Ω, T_C= 25^oC.

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