是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.8 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.1 A |
最小直流电流增益 (hFE): | 200 | 元件数量: | 1 |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.2 W |
子类别: | BIP General Purpose Small Signal | 表面贴装: | YES |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FA1F4ZL65-T2B-AT | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-346 |
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FA1F4ZL66 | NEC |
获取价格 |
TRANSISTOR | 60V V(BR)CEO | 100MA I(C) | SOT-346 |
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FA1F4ZL66-T1B | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MINIMOL |
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FA1F4ZL66-T1B-AT | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-346 |
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FA1F4ZL66-T2B-A | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-346 |
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FA1F4ZL66-T2B-AT | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-346 |
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FA1F4Z-LL64 | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC |
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FA1F4Z-T1B | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC |
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FA1F4Z-T1BL66 | NEC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC |
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FA1F4Z-T2B-AT | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-346 |
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